MAT12

更新时间： 2024-11-26 05:48:59

品牌	Logo	应用领域
亚德诺 - ADI		晶体晶体管
页数	文件大小	规格书
4页	95K
描述
Low Noise, Matched Dual Monolithic Transistor

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MAT12 数据手册

Low Noise, Matched

Dual Monolithic Transistor

MAT12

Preliminary Technical Data

FEATURES

PIN CONFIGURATION

Low offset voltage (V_OS): 50 μV max

Very Low Voltage Noise: 1nV/√Hz max @ 100Hz

High Gain (h_FE):

500 min at I_C= 1mA

300 min at I_C= 1μA

Excellent Log Conformance: r_BE= 0.3 Ω

Low Offset Voltage Drift: 0.1 μV/ºC max

High Gain Bandwidth Product: 200MHz

Note: Substrate is connected to case on TO-78 package. Substrate is

normally connected to the most negative circuit potential, but can

be floated

GENERAL DESCRIPTION

The design of the MAT12 series of NPN dual monolithic transistors is optimized for very low noise, low drift and

low r_BE. Exceptional characteristics of the MAT12 include offset voltage of 50 µV max and high current gain (hFE)

which is maintained over a wide range of collector current. Device performance is specified over the full

temperature range as well as at 25°C.

Input protection diodes are provided across the emitter-base junctions to prevent degradation of the device

characteristics due to reverse-biased emitter current. The substrate is clamped to the most negative emitter by the

parasitic isolation junction created by the protection diodes. This results in complete isolation between the

transistors.

The MAT12 is ideal for applications where low noise is a priority. The MAT12 can be used as an input

stage to make an amplifier with noise voltage of less than 1.0 nV/√Hz at 100 Hz. Other applications, such as

log/antilog circuits, may use the excellent logging conformity of the MAT12. Typical bulk resistance is only 0.3

Ω to 0.4 Ω. The MAT12 electrical characteristics approach those of an ideal transistor when operated over a

collector current range of 1µA to 10 mA.

Rev. PrA

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks are theproperty of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Fax: 781.461.3113

www.analog.com

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与MAT12相关器件

型号	品牌	获取价格	描述	数据表
MAT-12+	MINI	获取价格	Fixed Attenuator, 0MHz Min, 1500MHz Max, CASE A11
MAT12AHZ	ADI	获取价格	Audio, Dual-Matched NPN Transistor
MAT14	ADI	获取价格	Matched Monolithic Quad Transistor
MAT14ARZ	ADI	获取价格	Matched Monolithic Quad Transistor
MAT14ARZ-R7	ADI	获取价格	Matched Monolithic Quad Transistor
MAT14ARZ-RL	ADI	获取价格	Matched Monolithic Quad Transistor
MAT15	ETC	获取价格	Analog IC
MAT-15+	MINI	获取价格	Fixed Attenuator, 0MHz Min, 1500MHz Max, CASE A11
M-AT-1L(40)	HRS	获取价格	Variable Attenuator, 0MHz Min, 3000MHz Max, 0.28dB Insertion Loss-Max, ROHS COMPLIANT PACK
MAT2	ETC	获取价格	Analog IC

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