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MAT01AH PDF预览

MAT01AH

更新时间: 2024-11-25 22:30:27
品牌 Logo 应用领域
亚德诺 - ADI 晶体晶体管
页数 文件大小 规格书
8页 122K
描述
Matched Monolithic Dual Transistor

MAT01AH 数据手册

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Matched Monolithic  
Dual Transistor  
a
MAT01  
FEATURES  
PIN CONNECTION  
Low VOS (VBE Match): 40 V typ, 100 V max  
Low TCVOS: 0.5 V/؇C max  
High hFE: 500 min  
TO-78  
(H Suffix)  
Excellent hFE Linearity from 10 nA to 10 mA  
Low Noise Voltage: 0.23 V p-p—0.1 Hz to 10 Hz  
High Breakdown: 45 V min  
Available in Die Form  
PRODUCT DESCRIPTION  
The MAT01 is a monolithic dual NPN transistor. An exclusive  
Silicon Nitride “Triple-Passivation” process provides excellent  
stability of critical parameters over both temperature and time.  
Matching characteristics include offset voltage of 40 µV, tem-  
perature drift of 0.15 µV/°C, and hFE matching of 0.7%. Very  
high hFE is provided over a six decade range of collector current,  
including an exceptional hFE of 590 at a collector current of only  
10 nA. The high gain at low collector current makes the  
MAT01 ideal for use in low power, low level input stages.  
NOTE: Substrate is connected to case.  
BURN-IN CIRCUIT  
REV. A  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, nor for any infringements of patents or other rights of third parties  
which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Analog Devices.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 617/329-4700  
Fax: 617/326-8703  
World Wide Web Site: http://www.analog.com  
© Analog Devices, Inc., 1997  

MAT01AH 替代型号

型号 品牌 替代类型 描述 数据表
MAT01GHZ ADI

完全替代

Matched Monolithic Dual Transistor
MAT01AHZ ADI

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Matched Monolithic Dual Transistor
MAT01GH ADI

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Matched Monolithic Dual Transistor

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