HMIC™ Silicon PIN Diode SP4T Switch with
Integrated Bias Network, 2 - 18 GHz
MASW-011176
Rev. V1
Features
Functional Diagram
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Broad Bandwidth Specified up to 18 GHz
Integrated Bias Network
Low Insertion Loss / High Isolation
Fully Monolithic Glass Encapsulated Chip
Die Size: 2.76 x 2.24 mm
RoHS* Compliant
Applications
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Aerospace & Defense
EW
ISM
Radar
Test & Measurement
Description
The MASW-011176 device is a SP4T broadband
switch with integrated bias networks offered as a
bare die part. Large bond pads facilitate the use of
low inductance ribbon bonds, while gold backside
metallization allows for manual or automatic chip
bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag
solders or electrically conductive silver epoxy.
Pin Configuration1
Description
RF1 (Common Arm)
RF1 Bias
RF2 Bias
RF2
1
2
J1
B1
B2
J2
B3
J3
J4
B4
J5
B5
These high performance switches are suitable for
use in multi-band ECM, Radar, and instrumentation
control circuits where high isolation to insertion loss
ratios are required. With a standard +5 V / -5 V, TTL
controlled PIN diode driver, 70 ns switching speeds
can be achieved.
3
4
5
RF3 Bias
RF3
6
Ordering Information
7
RF4
8
RF4 Bias
RF5
9
MASW-011176-DIE
MASW-011176-SMB
Die in Gel Pack
Sample Board
10
RF5 Bias
1. The exposed metallization on the chip bottom must be
connected to RF, DC, and thermal ground.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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DC-0025312