AlGaAs SP2T Reflective PIN Diode Switch
20 - 55 GHz
MASW-011173-DIE
Rev. V2
Features
Functional Schematic
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Low Loss: 1 dB, 22 to 45 GHz
30 dBm CW Power Handling @ +85°C, 40 GHz
Switching Speed <30 ns
Integrated DC Blocks and Bias Networks
Die with GSG RF Pads and DC Bias Pads
RoHS* Compliant
RFCOMMON
1
RF2
3
RF1
2
Applications
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Test Equipment
Bias1
5
Switching Arrays of Radar Systems
Point-to-Point Communications
Multi-Assembly Components
Bias2
6
Description
Bias Com
4
The MASW-011173-DIE is a high power SP2T
switch with integrated bias networks. This
broadband, reflective switch was developed for
20 - 55 GHz applications that require up to 30 dBm
(1 W) power handling while maintaining low insertion
loss, high isolation, and fast switching speed. These
switches are suitable for multiple applications.
Pin Configuration1
1
RF Common
RF 1
This SP2T MMIC utilizes MACOM’s proven AlGaAs
PIN diode technology. The switch is fully passivated
with silicon nitride and has an added polymer layer
for scratch protection. The protective coating
prevents damage to the junction and the air-bridges
during handling and assembly. The die has backside
metallization designed to facilitate an epoxy die
attach process.
2
3
RF 2
4
Bias Common
Bias 1
5
6
Bias 2
Backside
Ground1
1. The entire exposed pad on the die bottom must be connected
to RF, DC and thermal ground.
Ordering Information
MASW-011173-DIE
MASW-011173-DIEW
MASW-011173-SMB
Gel-Pak
Waffle Pack
Sample Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0025446