K- & Ka-Band High Power Reflective SPDT PIN Switch Die
20 - 40 GHz
MASW-011144-DIE
Rev. V3
Functional Schematic
Features
• Broadband Performance, 20 - 40 GHz
• Low Loss: <1 dB, 30 - 40 GHz
5
4
• High Isolation: >30 dB, 20 - 40 GHz
• 40 dBm CW Power @ 35 GHz
• Die with G-S-G RF Pads and DC Bias Pads
• Includes DC blocking Capacitor at each RF input
and Bias Low Pass filters with Series Resistor
• RoHS* Compliant
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7
3
2
Applications
1
•
K- and Ka-Band applications, including point-to-
point radio and military products.
Description
Pad Configuration1
The MASW-011144-DIE is a high power SPDT,
reflective, broadband, high linearity, Aluminum
Gallium Arsenide (AlGaAs) PIN diode switch for
K- and Ka-Band applications, including point-to-point
radio and military products.
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2
3
4
5
6
7
RF Common
No Connection
BIAS1
The switch utilizes one shunt PIN diode per RF
channel. The diode is controlled through an on-chip
bias network that includes a current limiting resistor.
These bias networks simplify the control of the
switch; no external components are required.
RF1
The SPDT MMIC utilizes MACOM’s proven AlGaAs
PIN diode technology. The switch is fully passivated
with silicon nitride and has an added polymer layer
for scratch protection. The protective coating
prevents damage to the junctions and the anode
air-bridges during handling and assembly. The die
has backside metallization to facilitate an epoxy die
attach process.
RF2
BIAS2
No Connection
1. The die backside must be connected to RF, DC and thermal
ground.
Ordering Information
MASW-011144-DIE
Die in Gel Pack
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOMTechnology Solutions Inc. (MACOM) andits affiliatesreserve theright to makechanges to the product(s) orinformationcontained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information andsupport please visit:
https://www.macom.com/support
DC-0022676