AlGaAs SP3T Switch with Integrated Bias Network
2 - 22 GHz
MASW-011130-DIE
Rev. V3
Functional Schematic
Features
•
•
•
•
•
•
Broad Bandwidth Specified up to 22 GHz
5
4
Integrated DC Blocks and RF Bias Networks
Low Insertion Loss / High Isolation
Fast Switching Speed
C
C
L
Fully Monolithic
6
7
SW2
Low Current Consumption:
-10 mA for Low Loss State
+10 mA for Isolation State
C
L
SW1
C
3
2
• Die Size: 1.86 x 1.86 mm
• RoHS* Compliant
SW3
C
L
C
Applications
C
L
•
•
Test & Measurement
Broadband Communication Systems
C
R
Description
8
9
1
The MASW-011130 is an SP3T PIN diode switch
with integrated bias networks offered as bare die
part. This broadband, reflective switch operates from
2 - 22 GHz and provides less than 1 dB insertion
loss and 35 dB isolation.
Pad Configuration
1
2
3
4
5
6
7
RF Common
Bias 3
RF3
The combination of broadband performance along
with very fast switching (<10 ns) and excellent
settling time make this device ideal for many
applications, including Test & Measurement, and
broadband communication systems.
Bias 2
RF2
The switch is fully passivated with silicon nitride and
has an added polymer layer for scratch protection.
The protective coating prevents damage to the
junctions and the anode air-bridges during handling
and assembly. The die has backside metallization to
facilitate an epoxy die attach process.
Bias 1
RF1
RF Common Bias
(optional external Resistor)
8
9
RF Common Bias
Ordering Information
MASW-011130-DIE
Die in Gel Pack
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0023994