AlGaAs SP2T PIN Diode Switch with integrated bias circuits
Wideband, 80 - 100 GHz
MASW-011111-DIE
Rev. V2
Features
Functional Schematic
• 80 - 100 GHz Broadband Operating Frequency
• 0.8 dB Insertion Loss
• 25 dB Isolation
RFCOMMON
1
• Silicon Nitride Passivation
• BCB Scratch Protection
• Lead-Free AlGaAs MMIC Die
• Die Size: 1.33 x 1.055 x 0.1 mm
• RoHS* Compliant
C
C
C
C
RF2
5
RF1
2
L
L
C
C
Applications
• ISM / MM
Bias2
4
Bias1
3
Description
The MASW-011111-DIE is a wideband SP2T switch
manufactured using MACOM’s patented AlGaAs PIN
Diode MMIC process on a semi-insulating GaAs
substrate. The device is fully passivated with silicon
nitride and has an additional layer of BCB for scratch
protection. This protective coating prevents damage
to the circuit during automated or manual handling.
These devices are suitable for pick and place
insertion.
Pin Configuration1
Pin #
Function
RFCOMMON
RF1
1
2
3
4
5
Each RF port contains DC blocking capacitors and a
DC bias circuit consisting of high impedance lines
and RF radial stubs. This device has gold plated
bonding pads at all RF and DC ports. RF and DC
ground backside gold plating allows conventional
chip bonding techniques using 80Au/20Sn solder,
Indalloy solder, or electrically conductive silver
epoxy.
Bias1
Bias2
RF2
1. The die backside must be connected to RF, DC and thermal
ground.
Applications include satellite communications,
millimeter-wave radar, and 94 GHz imaging in
astronomy, defense, and security applications.
Ordering Information
MASW-011111-DIE
Waffle Pak
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOMTechnology Solutions Inc. (MACOM) andits affiliatesreserve theright to makechanges to the product(s) orinformationcontained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information andsupport please visit:
https://www.macom.com/support
DC-0018899