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MASMCJ60AE3TR PDF预览

MASMCJ60AE3TR

更新时间： 2024-11-21 06:04:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管电视
页数 文件大小 规格书
4页 186K
描述
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMCJ, 2 PIN

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中文翻译

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MASMCJ60AE3TR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214AB
包装说明：R-PDSO-J2针数：2
Reach Compliance Code：unknown风险等级：5.5
其他特性：HIGH RELIABILITY最大击穿电压：73.7 V
最小击穿电压：66.7 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214ABJESD-30 代码：R-PDSO-J2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1.56 W认证状态：Not Qualified
参考标准：MIL-19500最大重复峰值反向电压：60 V
表面贴装：YES技术：AVALANCHE
端子面层：MATTE TIN端子形式：J BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED

MASMCJ60AE3TR 数据手册

 浏览型号MASMCJ60AE3TR的Datasheet PDF文件第2页浏览型号MASMCJ60AE3TR的Datasheet PDF文件第3页浏览型号MASMCJ60AE3TR的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 1500 Watt  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Available in both J-bend and Gull-wing terminations  
- Selections for 5.0 to 170 V standoff voltages (VWM  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MSMCJ5.0A thru MSMCJ170CA, e3  
and MSMCG5.0A thru MSMCG170CA, e3  
FEATURES  
ƒ
ƒ
ƒ
High reliability controlled devices with fabrication and assembly lot traceability  
100 % surge tested devices  
Optional upscreening available by replacing the M prefix with MA, MX or MXL prefixes.  
These prefixes specify various screening and conformance inspection options based on  
MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options.  
ƒ
Axial-lead equivalent packages for thru-hole mounting available as 1.5KE6.8A to  
1.5KE200CA or 1N6267 thru 1N6303A and 1N5908 (consult factory for other surface mount  
options).  
Refer to table below  
for dimensions  
ƒ
ƒ
ƒ
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
ƒ
ƒ
ƒ
Protection from switching transients and induced RF  
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightening protection per IEC 61000-4-5 with 42 Ohms source impedance:  
o
o
o
o
Class 1: MSMC5.0A to MSMC170CA  
Class 2: MSMC5.0A to MSMC150CA  
Class 3: MSMC5.0A to MSMC75CA  
Class 4: MSMC5.0A to MSMC36CA  
ƒ
ƒ
Secondary lightening protection per IEC 61000-4-5 with 12 Ohms source impedance:  
o
o
o
o
Class 1: MSMC5.0A to MSMC90CA  
Class 2: MSMC5.0A to MSMC45CA  
Class 3: MSMC5.0A to MSMC24CA  
Class 4: MSMC5.0A to MSMC11CA  
Secondary lightening protection per IEC 61000-4-5 with 2 Ohms source impedance:  
o
o
Class 2: MSMC5.0A to MSMC22CA  
Class 3: MSMC5.0A to MSMC10CA  
MAXIMUM RATINGS  
Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (also see Figures 1,2, and  
ƒ
3) with impulse repetition rate (duty factor) of 0.01 % or less  
ƒ
ƒ
ƒ
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and <5 ns for bidirectional  
Operating and Storage temperature: -65 ºC to +150 ºC  
Thermal resistance: 20 ºC/W junction to lead, or 80 ºC/W junction to ambient when mounted  
on FR4 PC board (1oz Cu) with recommended footprint (see page 2)  
Steady-State Power dissipation: 6 watts at TL = 30 ºC, or 1.56 watts at TA = 25 ºC when  
mounted on FR4 PC board with recommended footprint (see page 2)  
Forward Surge: 200 Amps peak impulse of 8.3 ms half-sine wave at 25 ºC (unidirectional  
only)  
ƒ
ƒ
ƒ
Solder temperatures: 260 ºC for 10 s (maximum)  
RF01001 Rev B, Sept 2011  
High Reliability Product Group  
Page 1 of 4  
1234

中文翻译

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与MASMCJ60AE3TR相关器件

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MASMCJ60CAE3TR MICROSEMI

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MASMCJ60CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MASMCJ60CE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MASMCJ60E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MASMCJ60TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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