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MASMBJ2K5.0TR PDF预览

MASMBJ2K5.0TR

更新时间： 2024-11-28 08:33:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管电视
页数 文件大小 规格书
4页 306K
描述
2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2

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中文翻译

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MASMBJ2K5.0TR 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DO-214AA
包装说明：R-PDSO-J2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.92
其他特性：HIGH RELIABILITY最小击穿电压：5.9 V
最大钳位电压：7.6 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-J2
JESD-609代码：e0湿度敏感等级：1
最大非重复峰值反向功率耗散：2000 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1.38 W认证状态：Not Qualified
最大重复峰值反向电压：5 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：TIN LEAD端子形式：J BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MASMBJ2K5.0TR 数据手册

 浏览型号MASMBJ2K5.0TR的Datasheet PDF文件第2页浏览型号MASMBJ2K5.0TR的Datasheet PDF文件第3页浏览型号MASMBJ2K5.0TR的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
Surface Mount 2 kW  
- Unidirectional construction  
Transient Voltage Suppressor  
- Available in both J-bend and Gull-wing terminations  
- Selections for 3 V to 5 V standoff voltages (VWM)  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MSMBJ2K3.0 thru MSMBJ2K5.0, e3  
MSMBG2K3.0 thru MSMBG2K5.0,e3  
FEATURES  
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Suppresses transients up to 2 kW @ 8/20 µs  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
Voltage and reverse (leakage) current lowest available  
.
.
.
.
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance for Class 1  
MAXIMUM RATINGS  
.
.
Peak Pulse Power dissipation at 25 ºC: 2000 W @ 8/20 µs or 300 W @ 10/1000 µs  
with impulse repetition rate (duty factor) of 0.01 maximum (also see Figure 1 and 4)  
Steady-state power dissipation: 5 Watts @ TL ≤ 25 °C or 1.38 Watts at TA = 25 °C when  
mounted on FR4 PC board with recommended footprint  
.
.
.
Tclamping (0 Volts to VBR min.): <100 ps  
Operating and Storage temperatures: -65°C to +150°C  
Forward Voltage @ 25 °C: 3.5 Volts maximum @ 30 Amp peak impulse of 8.3 ms half-sine  
wave (unidirectional only)  
.
Solder temperatures: 260 °C for 10 s (maximum)  
RF01019 Rev A, November 2010  
High Reliability Product Group  
Page 1 of 4  
1234

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 		600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

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