Datasheet > MAS110S10X

MAS110S10X

更新时间： 2024-09-24 19:25:15

品牌	Logo	应用领域
DYNEX		局域网栅栅极
页数	文件大小	规格书
9页	67K
描述
Assymetric SCR, 175A I(T)RMS, 1000V V(DRM), 1 Element

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中文翻译

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技术参数
数据手册

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MAS110S10X 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-XUFM-X4
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.67	外壳连接：	ISOLATED
配置：	SINGLE WITH BUILT-IN ANTI-PARALLEL DIODE	最大直流栅极触发电流：	250 mA
JESD-30 代码：	R-XUFM-X4	元件数量：	1
端子数量：	4	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	最大均方根通态电流：	175 A
断态重复峰值电压：	1000 V	表面贴装：	NO
端子形式：	UNSPECIFIED	端子位置：	UPPER
触发设备类型：	ASSYMETRIC SCR	Base Number Matches：	1

MAS110S10X 数据手册

MAS110S

Fast Turn-off Asymmetric Thyristor/Diode Module

Replaces April 1999 version, DS4200-4.0

DS4200-5.0 January 2000

APPLICATIONS

KEY PARAMETERS

V_DRM

I_TSM

I_T(AV)per arm

V_isol

t_q

1400V

2000A

110A

● High Frequency High Power Choppers And Inverters.

● Ultrasonic Generators.

● Welding.

2500V

10/12/15µs

● PWM Inverters.

DESCRIPTION

The MAS 110S is a fast thyristor/diode module in an

electrically isolated package. The semiconductors are are

pressure contact mounted giving high resistance to

thermal fatigue, and having excellent heat dissipation

qualities.

Isolation medium is non-toxic alumina.

Outline type code: MAS110S

See Package Details for further information.

The MAS110S is recognised under the 'Recognised

Component Program of Underwriters Laboratories Inc.

USA. File number E151069.

Fig.1 Package outline (not to scale)

G₁K₁

VOLTAGE RATINGS

Type Number

Repetitive Peak

Conditions

Off-state Voltage

V_DRM

Fig.2 Single circuit

MAS110S 14

MAS110S 12

MAS110S 10

MAS110S 08

MAS110S 06

1400

1200

1000

800

T_vj= 125˚C,

I_DRM= 50mA,

V_DSM= V_DRM+ 100V

600

Forfulldescriptionofpartnumbersee'OrderingInformation'.

THYRISTOR CURRENT RATINGS

Symbol

I_T(AV)

Parameter

Mean forward current

RMS value

Conditions

Half wave resistive load, T_case= 75^oC

T_case= 75^oC

Max.

110

Units

175

I_T(RMS)

1/9

12 3 4 5 6 7...9

中文翻译

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