是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | QCCN, LCC24,.35SQ,40 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最长访问时间: | 135 ns |
I/O 类型: | COMMON | JESD-30 代码: | S-XQCC-N24 |
内存密度: | 4096 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 4 | 端子数量: | 24 |
字数: | 1024 words | 字数代码: | 1000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 1KX4 |
输出特性: | 3-STATE | 封装主体材料: | CERAMIC |
封装代码: | QCCN | 封装等效代码: | LCC24,.35SQ,40 |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
并行/串行: | PARALLEL | 电源: | 5 V |
认证状态: | Not Qualified | 筛选级别: | 38535V;38534K;883S |
最大待机电流: | 0.002 A | 最小待机电流: | 2 V |
子类别: | SRAMs | 最大压摆率: | 0.035 mA |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | NO LEAD | 端子节距: | 1 mm |
端子位置: | QUAD | 总剂量: | 100k Rad(Si) V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MAR5114LSBAF | DYNEX |
获取价格 |
Standard SRAM, 1KX4, 135ns, CMOS, CQCC24, | |
MAR5114LSXXX | MICROSEMI |
获取价格 |
SRAM, | |
MAR5KP100AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MAR5KP100ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, PL | |
MAR5KP100C | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
MAR5KP100CA | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
MAR5KP100CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
MAR5KP100CAE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
MAR5KP100CATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
MAR5KP100CE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, ROH |