MAPL-000978-0075LF
MAPL-000978-0075LN
LDMOS Pulsed Power Transistor
75W, 978 MHz, 400µs Pulse, 1% Duty
M/A-COM Products
Released, 23 Jun 09
Product Image
Features
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•
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Gold LDMOS microwave power transistor
Common source configuration
Broadband Class AB operation
RoHS Compliant
Avionics applications specifically designed for
Internal input and output impedance matching.
Integrated ESD Protection
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RoHS Compliant
MAPL-000978-0075LF
Absolute Maximum Ratings at 25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
Rating
60
Units
V
VGS
-0.7 to 15
350
V
Total Power Dissipation
(TC = 25°C)
PTOT
W
MAPL-000978-0075LN
Storage Temperature
TSTG
TJ
-65 to +175
200
°C
°C
Junction Temperature
Thermal Characteristics
Parameter
MAXIMUM RATINGS
Test Conditions
Symbol Max Units
Thermal Resistance, Junction to Case
VDD = 28V, IDQ = 250mA, Pout = 75W
RTH(JC)
0.5
°C/W
Typical RF Performance
P1dB
Freq.
(MHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Id-Pk
(A)
Eff
(%)
RL
(dB)
VSWR-S VSWR-T
(2:1)
(5:1)
Gain (dB)
Pout (W)
978
1.1
75
18.2
5.3
50
-16
S
P
81
18.0
Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows:
Vdd=28V, Idq=250mA (pulsed), F=978MHz, Pulse=400us, Duty=1%.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
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and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
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changes to the product(s) or information contained herein without notice.