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MAP4KE11CE3 PDF预览

MAP4KE11CE3

更新时间: 2024-11-11 15:44:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
6页 428K
描述
Trans Voltage Suppressor Diode

MAP4KE11CE3 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.61
Is Samacsys:N二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码:e3端子面层:MATTE TIN
Base Number Matches:1

MAP4KE11CE3 数据手册

 浏览型号MAP4KE11CE3的Datasheet PDF文件第2页浏览型号MAP4KE11CE3的Datasheet PDF文件第3页浏览型号MAP4KE11CE3的Datasheet PDF文件第4页浏览型号MAP4KE11CE3的Datasheet PDF文件第5页浏览型号MAP4KE11CE3的Datasheet PDF文件第6页 

与MAP4KE11CE3相关器件

型号 品牌 获取价格 描述 数据表
MAP4KE11CE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 8.92V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE11E3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode
MAP4KE11E3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 8.92V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE120 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 97.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE120A MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MAP4KE120ATRE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MAP4KE120C MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 97.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE120CAE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MAP4KE120CAE3/TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MAP4KE120CATR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-2