5秒后页面跳转
MAGB-103440-005B0P PDF预览

MAGB-103440-005B0P

更新时间: 2024-11-08 14:55:43
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
12页 955K
描述
GaN Amplifier 48 V, 5 W 3.4 - 4.0 GHz

MAGB-103440-005B0P 数据手册

 浏览型号MAGB-103440-005B0P的Datasheet PDF文件第2页浏览型号MAGB-103440-005B0P的Datasheet PDF文件第3页浏览型号MAGB-103440-005B0P的Datasheet PDF文件第4页浏览型号MAGB-103440-005B0P的Datasheet PDF文件第5页浏览型号MAGB-103440-005B0P的Datasheet PDF文件第6页浏览型号MAGB-103440-005B0P的Datasheet PDF文件第7页 
GaN Amplifier 48 V, 5 W  
3.4 - 4.0 GHz  
MAGB-103440-005B0P  
Rev. V1  
Features  
Suitable for Linear and Saturated Applications  
Optimized for Cellular Base Station Applications  
Designed for Digital Predistortion Error  
Correction Systems  
High Terminal Impedances for Broadband  
Performance  
48 V Operation  
4x4mm DFN  
100 % RF Tested  
RoHS* Compliant  
Functional Schematic  
Description  
The MAGB-103440-005B0P GaN HEMT is a  
wideband GaN HEMT D-mode amplifier  
designed for base station applications and  
optimized for 3.4 - 4.0 GHz modulated signal  
operation. This device supports pulsed and  
linear operation with peak output power levels  
to 5W (37 dBm) in a 4x4mm DFN package.  
VG  
1
2
3
6
5
4
N/C  
N/C  
N/C  
Input  
Match  
RFOUT  
VD  
/
RFIN  
7
Pad / Flange  
Typical Performance:  
VDS = 48 V, IDQ = 14 mA, TC = 25°C.  
Measured under load-pull at 2.5 dB  
Compression, 100 µs pulse width, 10% duty  
cycle.  
Pin Configuration3  
1
2,5,6  
3
VG  
N/C  
Gate  
2
Gain2  
(dB)  
Frequency Output Power1  
D  
(GHz)  
(dBm)  
(%)  
No Connection  
RF Input  
3.4  
3.6  
3.8  
4.0  
37.6  
37.4  
37.6  
37.4  
17.6  
16.8  
16.8  
16.9  
56.0  
56.8  
59.0  
58.6  
RFIN  
4
RFOUT / VD  
Pad3  
RF Output / Drain  
Ground / Source  
7
1. Load impedance tuned for maximum output power.  
2. Load impedance tuned for maximum drain efficiency.  
3. The pad on the package bottom must be connected to RF, DC  
or thermal ground.  
Ordering Information  
Part Number  
Package  
MAGB-103440-005B0P  
MAGB-103440-005BTP  
MAGB-1B3440-005B0P  
Bulk Quantity  
Tape and Reel  
Class-AB Sample Board  
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.  
1
MACOMTechnology Solutions Inc. (MACOM) andits affiliatesreserve theright to makechanges to the product(s) orinformationcontained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information andsupport please visit:  
https://www.macom.com/support  
DC-0024766  

与MAGB-103440-005B0P相关器件

型号 品牌 获取价格 描述 数据表
MAGB-103440-010B0P MACOM

获取价格

GaN Amplifier 50 V, 10 W, 3.4 - 4.0GHz, n78, n77 & n48
MAGB-104450-015B0P MACOM

获取价格

GaN Amplifier 50 V, 15 W 4.4 - 5.0 GHz
MAGB-104550-005B0P MACOM

获取价格

GaN Amplifier 48 V, 5 W 4.5 - 5.0 GHz
MAGe-100809-500G00 MACOM

获取价格

GaN Amplifier 50 V, 500 W, 896 - 928 MHz
MAGE-102425-300S00 MACOM

获取价格

GaN Amplifier 50 V, 300 W, 2.4 - 2.5GHz
MAGIC6 ADTECH

获取价格

specifically designed for LED lighting and decorative LED lighting applications
MAGIC9 ADTECH

获取价格

specifically designed for LED lighting applications for AC power system
MAGJACK BEL

获取价格

MAGJACK PRODUCT GUIDE
mag-Net?

获取价格

Magnetic Connector
MAGX-000025-150000_15 TE

获取价格

GaN on SiC HEMT Power Transistor