Datasheet > MAGB-102527-110A0P

MAGB-102527-110A0P

更新时间： 2024-11-28 14:54:59

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	917K
描述
GaN Amplifier 48 V, 110 W 2.5 - 2.7 GHz

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GaN Amplifier 48 V, 110 W

2.5 - 2.7 GHz

MAGB-102527-110A0P

Rev. V2

Features

•

Optimized for Cellular Base Station Applications

Designed for Digital Predistortion Error

Correction Systems

•

High Terminal Impedances for Broadband

Performance

7 x 10 mm DFN

•

48 V Operation

100 % RF Tested

RoHS* Compliant

Functional Schematic

Description

The MAGB-102527-110A0P GaN HEMT D-mode

amplifier is designed for base station applications

and is optimized for 2.5 - 2.7 GHz modulated signal

operation. This device supports pulsed and linear

operation with peak output power levels to 110W

(50.4 dBm) in a 7 x 10 mm DFN package.

10 N/C

N/C

RF_IN

RF_OUT

V_G

V_D

Pad

GND

Typical RF Performance

RF_OUT

V_D

RF_IN

V_G

•

WCDMA 3GPP TM1 64 DPCH 9.9 dB PAR @

0.01% CCDF, V_DS= 48 V, I_DQCAR= 105 mA,

V_GSPK= -4.2 V, T_C= 25°C, P_OUT= 41.5 dBm.

N/C

Frequency

(GHz)

Output PAR

(dB)

ACPR

(dBc)

2.5

2.6

2.7

15.9

16.0

15.6

8.6

8.4

-29

-32

-34

Pin Configuration

1,5,6,10

N/C

No Connection

RF_IN/ V_G

RF_OUT/ V_D

RF_IN/ V_G

RF Input / Gate (Carrier)

RF Output / Drain (Carrier)

RF Input / Gate (Peaking)

Ordering Information

Part Number

Package

MAGB-102527-110A0P

MAGB-102527-110ATP

MAGB-1D2527-110A0P

Bulk Quantity

RF_OUT/ V_DRF Output / Drain (Peaking)

Pad¹

Tape and Reel

3,8,11

Ground / Source

Doherty Sample Board

1. The pad on the package bottom must be connected to RF, DC

and thermal ground.

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0024446

12 3 4 5 6 7...9

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