5秒后页面跳转
MAGB-101836-025B0P PDF预览

MAGB-101836-025B0P

更新时间: 2024-11-06 14:55:55
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
13页 843K
描述
GaN Amplifier 50 V, 25 W, 1.8 - 3.6GHz

MAGB-101836-025B0P 数据手册

 浏览型号MAGB-101836-025B0P的Datasheet PDF文件第2页浏览型号MAGB-101836-025B0P的Datasheet PDF文件第3页浏览型号MAGB-101836-025B0P的Datasheet PDF文件第4页浏览型号MAGB-101836-025B0P的Datasheet PDF文件第5页浏览型号MAGB-101836-025B0P的Datasheet PDF文件第6页浏览型号MAGB-101836-025B0P的Datasheet PDF文件第7页 
GaN Amplifier 50 V, 4 W AVG  
1.8 - 3.6 GHz  
MAGB-101836-025B0P  
Rev. V2  
Features  
Functional Schematic  
Optimized for Cellular Base Station Applications  
High Terminal Impedances for Broadband  
Performance  
50 V Operation  
100% RF Tested  
N/C  
40  
N/C  
39  
N/C  
38  
N/C  
37  
N/C  
36  
N/C  
35  
N/C  
34  
N/C  
33  
1
2
3
4
5
6
32 N/C  
N/C  
N/C  
31  
N/C  
RoHS* Compliant  
30 N/C  
29 N/C  
N/C  
N/C  
Description  
28  
27  
RFIN / VG  
RFOUT / VD  
RFOUT / VD  
The MAGB-101836-025B0P GaN HEMT is a D-  
mode amplifier designed for base station  
applications and optimized for modulated signal  
operation in the 1.8 - 3.6 GHz frequency bands. This  
device supports pulsed and linear operation with  
peak output power levels to 25 W (44 dBm) in a  
5 x 7 mm QFN package.  
RFIN / VG  
RFIN / VG  
RFIN / VG  
N/C  
7
8
26 RFOUT / VD  
25 RFOUT / VD  
24 N/C  
41  
Pad / Flange  
9
N/C  
23  
10  
11  
12  
N/C  
22 N/C  
21 N/C  
N/C  
N/C  
Typical Performance:  
13  
14  
15  
16  
17  
N/C  
18  
19  
20  
WCDMA 3GPP TM1 64 DPCH 9.9 dB PAR @  
N/C  
N/C  
N/C  
N/C  
N/C  
N/C  
N/C  
0.01% CCDF. VDS = 50 V, IDQ = 75 mA , POUT  
36 dBm  
=
Pin Configuration  
Frequency  
(MHz)  
Output PAR  
(dB)  
ACPR  
(dBc)  
1 - 4, 9 - 24,  
N/C  
RFIN / VG  
No Connection  
29 - 40  
3400  
3500  
3600  
16.2  
16.9  
16.6  
29  
29  
29  
8.2  
8.2  
8.0  
-36.0  
-37.0  
-37.5  
5 - 8  
RF Input / Gate  
RF Output / Drain  
Ground / Source  
25 - 28  
RFOUT / VD  
Pad3  
41  
3. The exposed pad centered on the package bottom must be  
connected to RF and DC ground. This path must also provide  
a low thermal resistance heat path.  
Ordering Information1,2  
Part Number  
Package  
MAGB-101836-025B0P  
Bulk Quantity  
3.6 GHz Class-AB  
Sample Board  
MAGB-1B1836-025B0P  
MAGB-101836-025BTP  
1000 Piece Reel  
1. Sample Board includes two loose parts.  
2. Reference Application Note M513 for reel size information.  
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.  
1
MACOMTechnology Solutions Inc. (MACOM) andits affiliatesreserve theright to makechanges to the product(s) orinformationcontained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information andsupport please visit:  
https://www.macom.com/support  
DC-0022040  

与MAGB-101836-025B0P相关器件

型号 品牌 获取价格 描述 数据表
MAGB-102327-010B0P MACOM

获取价格

GaN Amplifier 50 V, 10 W, 2.3 - 2.7GHz, n40 & n41
MAGB-102327-012B0P MACOM

获取价格

GaN Amplifier 48 V, 10 W 2.3 - 2.7 GHz
MAGB-102527-110A0P MACOM

获取价格

GaN Amplifier 48 V, 110 W 2.5 - 2.7 GHz
MAGB-103338-050S0P MACOM

获取价格

GaN Amplifier 48 V, 50 W 3.3 - 3.8 GHz
MAGB-103340-015B0P MACOM

获取价格

GaN Amplifier 48 V, 15 W 3.3 - 4.0 GHz
MAGB-103438-020S0P MACOM

获取价格

GaN Amplifier 50 V, 20 W, 3.4 - 3.8GHz, Dual
MAGB-103440-005B0P MACOM

获取价格

GaN Amplifier 48 V, 5 W 3.4 - 4.0 GHz
MAGB-103440-010B0P MACOM

获取价格

GaN Amplifier 50 V, 10 W, 3.4 - 4.0GHz, n78, n77 & n48
MAGB-104450-015B0P MACOM

获取价格

GaN Amplifier 50 V, 15 W 4.4 - 5.0 GHz
MAGB-104550-005B0P MACOM

获取价格

GaN Amplifier 48 V, 5 W 4.5 - 5.0 GHz