THz Schottky Barrier Diode
W Band
MADZ-01100x Series
Rev. V1
Features
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Low Series Resistance
Low Capacitance
High Cutoff Frequency
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Easy Circuit Insertion
MADZ-011002
Applications
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Radar
Communications
Test and Measurement
MADZ-011003
Description
The MADZ-011002 Single junction, MADZ-011003
anti-parallel pair, MADZ-011004 reverse tee and
MADZ-011005 unconnected anti-parallel pair are
gallium arsenide flip chip THz Schottky barrier
diodes.
These devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device
uniformity and extremely low parasitics. The diodes
are fully passivated with silicon nitride and have an
additional layer of polyimide for scratch protection.
The protective coatings prevent damage to the
junction during automated or manual handling. The
flip chip configuration is suitable for pick and place
insertion.
MADZ-011004
The high cutoff frequencies of these diodes allow
use through G and W band frequencies. Typical
applications include single and double balanced
mixers in radio transceivers and automotive radars.
MADZ-011005
The MADZ-011003 anti-parallel pair is designed for
use in sub harmonically pumped mixers. Close
matching of the diode characteristics results in high
LO suppression at the RF input.
Ordering Information
Part Number
Package
The MADZ-011005 unconnected pair may be used
in temperature-compensated detector circuits, as
well as receiver protector limiter circuits and more.
MADZ-011002-1278G0
MADZ-011003-1197G0
MADZ-011004-1199G0
MADZ-011005-1262G0
25 piece gel pack
1
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DC-0024387