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MADP-064908-131000 PDF预览

MADP-064908-131000

更新时间： 2024-09-16 14:53:15
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
8页 695K
描述
SURMOUNT PIN Diode Double Tee

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中文翻译

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MADP-064908-131000 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：R-XBCC-N6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.28
Is Samacsys：N应用：ATTENUATOR; SWITCHING
配置：2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大二极管电容：0.07 pF
二极管元件材料：SILICON二极管类型：PIN DIODE
JESD-30 代码：R-XBCC-N6少数载流子标称寿命：0.2 µs
元件数量：4端子数量：6
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
表面贴装：YES技术：POSITIVE-INTRINSIC-NEGATIVE
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MADP-064908-131000 数据手册

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MADP-064908-131000  
SurmountTM PINChip  
RoHS Compliant  
Rev. V4  
Features  
No Wire Bonds Required  
Case Style - ODS-1310  
Rugged Silicon-Glass Construction  
Silicon Nitride Passivation  
Polymer Scratch Protection  
Ultra-Low Parasitic Capacitance and Inductance  
Higher RF C.W. Power Handling  
Better Performance than Packaged Devices  
Description and Applications  
This device is asilicon glass PIN diode chip fabricated with  
M/A-COM Tech Solutions patented HMIC process.  
This 80μm I-region length device features six silicon  
pedestals embedded in a low loss, low dispersion  
glass. The diodes are formed on the top of a ped-  
estal and connections to the backside of the device  
are facilitated by making the pedestal sidewalls elec-  
tricallyconductive. Selective backsidemetallization is ap-  
plied producing a surface mount device. The topside  
is fully encapsulated with silicon nitride and has an  
additional polymer layer for scratch protection.  
These protective coatings prevent damage to the  
junction and the anode air-bridge during handling  
and assembly. The vertical silicon diode topology  
provides for a highly efficient heat transfer medium.  
These surface mount devices are suitable for usage  
in higher (3W avg.) incident power switches. Small  
parasitic inductance and excellent RC constant  
make these devices ideal for absorptive SPST, re-  
flective SP2T switches, and attenuator circuits,  
where higher P1db and power handling values are  
required.  
Absolute Maximum Ratings1  
@ TAMB = +25°C (unless otherwise specified)  
Inches  
Millimeters  
Dim  
Min.  
Max.  
Min.  
Max.  
Parameter  
Absolute Maximum  
250mA  
A
B
C
D
0.060  
0.036  
0.004  
0.011  
0.062  
1.524  
1.575  
Forward Current  
Reverse Voltage  
0.038  
0.008  
0.012  
0.914  
0.102  
0.279  
0.965  
0.203  
0.305  
–100V  
Operating  
Temperature  
-55°C to +125°C  
Storage Temperature  
Junction Temperature  
C.W. Incident Power  
Mounting Temperature  
-55°C to +150°C  
+175°C  
+35dBm  
+300°C for 10 seconds  
1. Backside Metal: 0.1microns thick.  
1. Operation of this device above any one of these parameters  
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
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中文翻译

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