Dual Pair Anti-Parallel Low Magnetic PIN Diode
MADP-047668-x
Rev. V3
Functional Schematic
Features
•
•
•
•
Designed for MRI Applications
Anti-Parallel Self Bias Arrangement
Low Magnetic Packaging
RoHS* Compliant
Applications
Internal Construction
•
Multi Market
Description
The MADP-047668-x device is a passive switch
element using silicon PIN diodes arranged in an anti
-parallel configuration to facilitate efficient RF power
handling. The PIN diodes become a high Q, R-C
network under small signal conditions and perform
as an effective rectifier or short-circuit under high RF
signal to tune and detune the resonant MRI tank
circuit. This device is available in a high thermal
conductivity series sink copper leaded package, or a
2.5 mm plastic encapsulated QFN.
ODS-1134
ODS-1441
Electrical Specifications: TA = +25°C
Parameter
Breakdown Voltage
Forward Voltage
Junction Capacitance
Total Capacitance
Series Resistance
Lifetime
Test Conditions
Units
V
Min.
50
—
Typ.
—
Max.
—
IR = 10 µA
IF = 100 mA
V
1.0
1.0
2.5
0.5
20
1.2
—
VR = 0 V, 1 MHz
pF
pF
Ω
—
VR = 0 V, 1 MHz
—
—
IF = 100 mA, 100 MHz
IF = 10 mA, IR = 6 mA , 90%
—
1.0
30
ns
—
Infinite Heat Sink
ODS-1134
Thermal Resistance (ODS-1134)
C/W
µs
—
—
20
35
—
ODS-1441
Conductance
VR = 0 V, f = 64 MHz
—
40
Absolute Maximum Ratings
Breakdown Voltage
Forward Current
50 V
2 A
Ordering Information
Junction Temperature
+175°C
MADP-047668-1134B0
MADP-047668-1441BN
Bulk
Storage Temperature
Solder Temperature
-55°C to +150°C
+260°C
per JEDEC STD-J-20C
3000 Piece Reel
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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