Preferred Device
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts
http://onsemi.com
• On-State Current Rating of 8.0 Amperes RMS at 100°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dv/dt — 500 V/µs minimum at 125°C
• Minimizes Snubber Networks for Protection
TRIACS
8 AMPERES RMS
400 thru 800 VOLTS
• Industry Standard TO-220AB Package
• High Commutating di/dt — 6.5 A/ms minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MAC9D, Date Code
MT2
MT1
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off–State Voltage
V
Volts
DRM,
(T = –40 to 125°C, Sine Wave,
V
RRM
J
50 to 60 Hz, Gate Open)
4
MAC9D
MAC9M
MAC9N
400
600
800
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz,
= 100°C)
I
8.0
Amps
Amps
T(RMS)
T
C
1
2
3
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
I
TSM
80
TO–220AB
CASE 221A
STYLE 4
T = 125°C)
J
2
2
Circuit Fusing Consideration
(t = 8.3 ms)
I t
26
16
A sec
Peak Gate Power
(Pulse Width ≤ 1.0 µs, T = 80°C)
P
Watts
Watt
°C
PIN ASSIGNMENT
GM
C
1
2
3
4
Main Terminal 1
Average Gate Power
(t = 8.3 ms, T = 80°C)
P
0.35
G(AV)
Main Terminal 2
Gate
C
Operating Junction Temperature Range
T
J
–40 to
+125
Main Terminal 2
Storage Temperature Range
T
stg
–40 to
+150
°C
ORDERING INFORMATION
(1) V
DRM
and V for all types can be applied on a continuous basis. Blocking
RRM
Device
MAC9D
Package
Shipping
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TO220AB
TO220AB
TO220AB
50 Units/Rail
50 Units/Rail
50 Units/Rail
MAC9M
MAC9N
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2000 – Rev. 2
MAC9/D