Datasheet > MAC997

MAC997

更新时间： 2024-01-14 23:19:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	188K
描述
SENSITIVE GATE TRACS

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数据手册

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MAC997 数据手册

Preferred Device

Silicon Bidirectional Thyristors

Designed for use in solid state relays, MPU interface, TTL logic and

any other light industrial or consumer application. Supplied in an

inexpensive TO–92 package which is readily adaptable for use in

automatic insertion equipment.

http://onsemi.com

• One–Piece, Injection–Molded Package

• Blocking Voltage to 600 Volts

TRIACS

• Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all

possible Combinations of Trigger Sources, and especially for Circuits

that Source Gate Drives

0.8 AMPERE RMS

400 thru 600 VOLTS

• All Diffused and Glassivated Junctions for Maximum Uniformity of

Parameters and Reliability

• Improved Noise Immunity (dv/dt Minimum of 20 V/µsec at 110°C)

• Commutating di/dt of 1.6 Amps/msec at 110°C

• High Surge Current of 8 Amps

MT2

MT1

• Device Marking: Device Type, e.g., for MAC997A6: MAC7A6, Date

Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off-State Voltage

Volts

DRM,

(1)

(T = –40 to +110°C)

RRM

Sine Wave 50 to 60 Hz, Gate Open

MAC997A6,B6

400

600

TO–92 (TO–226AA)

CASE 029

MAC997A8,B8

STYLE 12

On-State RMS Current

Full Cycle Sine Wave 50 to 60 Hz

0.8

Amp

T(RMS)

(T = +50°C)

PIN ASSIGNMENT

Peak Non–Repetitive Surge Current

One Full Cycle, Sine Wave 60 Hz

(T = 110°C)

8.0

Amps

Main Terminal 1

Gate

Main Terminal 2

TSM

I t

A s

Circuit Fusing Considerations (t = 8.3 ms)

.26

5.0

Peak Gate Voltage

Volts

Watts

Watt

Amp

°C

2.0 s, T = +80°C)

ORDERING INFORMATION

Peak Gate Power

5.0

0.1

1.0

Seedetailedorderingandshippinginformationinthepackage

dimensions section on page 8 of this data sheet.

(t 2.0 s, T = +80°C)

Average Gate Power

G(AV)

Preferred devices are recommended choices for future use

and best overall value.

(T = 80°C, t

8.3 ms)

Peak Gate Current

2.0 s, T = +80°C)

Operating Junction Temperature Range

–40 to

+110

Storage Temperature Range

stg

–40 to

+150

°C

(1) V

DRM

and V for all types can be applied on a continuous basis. Blocking

RRM

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

May, 2000 – Rev. 2

MAC997/D

12 3 4 5 6 7...12

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与MAC997相关器件

型号	品牌	获取价格	描述	数据表
MAC997_06	ONSEMI	获取价格	Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC997A6	ONSEMI	获取价格	SENSITIVE GATE TRACS
MAC997A6RL1	ONSEMI	获取价格	SENSITIVE GATE TRACS
MAC997A6RL1G	ONSEMI	获取价格	400V, 0.8A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92, CASE 29-11, TO-226AA, 3 PIN
MAC997A6RLRP	ONSEMI	获取价格	SENSITIVE GATE TRACS
MAC997A8	ONSEMI	获取价格	SENSITIVE GATE TRACS
MAC997A8G	ONSEMI	获取价格	暂无描述
MAC997A8RL1	ONSEMI	获取价格	SENSITIVE GATE TRACS
MAC997A8RLRP	ONSEMI	获取价格	SENSITIVE GATE TRACS
MAC997A8RLRPG	ONSEMI	获取价格	Sensitive Gate Triac, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD