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MAC97A6RL1G PDF预览

MAC97A6RL1G

更新时间: 2024-01-15 16:54:00
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅三端双向交流开关
页数 文件大小 规格书
8页 133K
描述
Sensitive Gate Triacs

MAC97A6RL1G 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80Factory Lead Time:1 week
风险等级:5.04Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
最大直流栅极触发电流:5 mA最大直流栅极触发电压:2 V
最大维持电流:10 mAJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
最大漏电流:0.1 mA元件数量:1
端子数量:3最高工作温度:110 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:0.6 A断态重复峰值电压:400 V
子类别:TRIACs表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

MAC97A6RL1G 数据手册

 浏览型号MAC97A6RL1G的Datasheet PDF文件第2页浏览型号MAC97A6RL1G的Datasheet PDF文件第3页浏览型号MAC97A6RL1G的Datasheet PDF文件第4页浏览型号MAC97A6RL1G的Datasheet PDF文件第5页浏览型号MAC97A6RL1G的Datasheet PDF文件第6页浏览型号MAC97A6RL1G的Datasheet PDF文件第7页 
MAC97 Series  
Sensitive Gate Triacs  
Silicon Bidirectional Thyristors  
Designed for use in solid state relays, MPU interface, TTL logic and  
any other light industrial or consumer application. Supplied in an  
inexpensive TO92 package which is readily adaptable for use in  
automatic insertion equipment.  
http://onsemi.com  
Features  
TRIACS  
0.8 AMPERE RMS  
200 thru 600 VOLTS  
OnePiece, InjectionMolded Package  
Blocking Voltage to 600 Volts  
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all  
possible Combinations of Trigger Sources, and especially for Circuits  
that Source Gate Drives  
MT2  
MT1  
All Diffused and Glassivated Junctions for Maximum Uniformity of  
G
Parameters and Reliability  
These are PbFree Devices*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off-State Voltage  
V
V
DRM,  
RRM  
(T = 40 to +110°C) (Note 1)  
V
J
Sine Wave 50 to 60 Hz, Gate Open  
MAC  
97Ax  
AYWWG  
G
1
MAC97A4  
MAC97A6  
MAC97A8  
200  
400  
600  
1
2
2
3
3
BENT LEAD  
STRAIGHT LEAD  
BULK PACK  
TAPE & REEL  
AMMO PACK  
On-State RMS Current  
Full Cycle Sine Wave 50 to 60 Hz  
I
0.6  
A
A
T(RMS)  
TO92 (TO226)  
CASE 029  
(T = +50°C)  
C
Peak NonRepetitive Surge Current  
One Full Cycle, Sine Wave 60 Hz  
I
8.0  
STYLE 12  
TSM  
(T = 110°C)  
C
MAC97Ax = Device Code  
x = 4, 6, or 8  
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
0.26  
5.0  
A s  
A
Y
WW  
G
= Assembly Location  
Peak Gate Voltage  
V
V
W
W
A
GM  
GM  
= Year  
= Work Week  
(t v 2.0 ms, T = +80°C)  
C
Peak Gate Power  
P
5.0  
0.1  
1.0  
= PbFree Package  
(t v 2.0 ms, T = +80°C)  
C
(Note: Microdot may be in either location)  
Average Gate Power  
(T = 80°C, t v 8.3 ms)  
P
G(AV)  
C
Peak Gate Current  
I
GM  
PIN ASSIGNMENT  
(t v 2.0 ms, T = +80°C)  
C
1
2
3
Main Terminal 1  
Gate  
Operating Junction Temperature Range  
Storage Temperature Range  
T
40 to +110  
40 to +150  
°C  
°C  
J
T
stg  
Main Terminal 2  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 Rev. 10  
MAC97/D  
 

MAC97A6RL1G 替代型号

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完全替代

Sensitive Gate Triacs Silicon Bidirectional Thyristors
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完全替代

Sensitive Gate Triacs Silicon Bidirectional Thyristors

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