MAC4DSN

更新时间： 2024-11-28 11:21:19

品牌	Logo	应用领域
安森美 - ONSEMI		栅极三端双向交流开关
页数	文件大小	规格书
8页	129K
描述
SILICON BIDIRECTIONAL THYRISTORS

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中文翻译

获取价格

数据手册
替代型号

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MAC4DSN 数据手册

MAC4DSM, MAC4DSN

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

http://onsemi.com

Features

TRIACS

4.0 AMPERES RMS

600 − 800 VOLTS

• Small Size Surface Mount DPAK Package

• Passivated Die for Reliability and Uniformity

• Blocking Voltage to 800 V

• On−State Current Rating of 4.0 Amperes RMS at 108°C

• Low IGT − 10 mA Maximum in 3 Quadrants

• High Immunity to dv/dt − 50 V/m s at 125°C

• Epoxy Meets UL 94, V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

MT2

MT1

MARKING

DIAGRAMS

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

YWW

4DSx

DPAK

CASE 369C

STYLE 6

Peak Repetitive Off−State Voltage

RRM

DRM,

(Note 1) (T = −40 to 125°C, Sine Wave,

50 to 60 Hz, Gate Open)

MAC4DSM

600

800

MAC4DSN

On−State RMS Current

(Full Cycle Sine Wave, 60 Hz,

4.0

T(RMS)

YWW

4DSx

DPAK−3

CASE 369D

STYLE 6

= 108°C)

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

T = 125°C)

TSM

Circuit Fusing Consideration

(t = 8.3 msec)

I t

6.6

0.5

0.1

0.2

5.0

A sec

= Year

= Work Week

= M or N

Peak Gate Power

(Pulse Width ≤ 10 m sec, T = 108°C)

Average Gate Power

G(AV)

PIN ASSIGNMENT

(t = 8.3 msec, T = 108°C)

Main Terminal 1

Peak Gate Current

Main Terminal 2

Gate

(Pulse Width ≤ 10

smec, T = 108°C)

Peak Gate Voltage

Main Terminal 2

(Pulse Width ≤ 10

smec, T = 108°C)

Operating Junction Temperature Range

Storage Temperature Range

−40 to 125

−40 to 150

°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

1. V

and V

for all types can be applied on a continuous basis. Blocking

DRM

RRM

voltages shall not be tested with a constant current source such that the

voltage ratings of the device are exceeded.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

August, 2004 − Rev. 4

MAC4DSM/D

12 3 4 5 6 7 8

中文翻译

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MAC4DSN 替代型号

型号	品牌	替代类型	描述	数据表
MAC4DSMT4G	ONSEMI	功能相似	Triacs Silicon Bidirectional Thyristors

与MAC4DSN相关器件

型号	品牌	获取价格	描述	数据表
MAC4DSN-001	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
MAC4DSN-001G	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
MAC4DSN-1	ONSEMI	获取价格	800V, 4A, TRIAC, CASE 369, DPAK-3
MAC4DSN-1G	LITTELFUSE	获取价格	TRIAC, 800V V(DRM), 4A I(T)RMS, DPAK-3
MAC4DSN-1G	ONSEMI	获取价格	4.0 A Sensitive Gate Triac, DPAK INSERTION MOUNT, 75-TUBE
MAC4DSNT4	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
MAC4DSNT4	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 4A I(T)RMS, DPAK-3
MAC4DSNT4G	ONSEMI	获取价格	Triacs Silicon Bidirectional Thyristors
MAC4DSNT4G	LITTELFUSE	获取价格	该三端双向可控硅专门用于高容量、低成本的工业和消费应用，例如电机控制、过程控制以及温度、光
MAC4M	ONSEMI	获取价格	TRIACS, Silicon Bidirectional Thyristors

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