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MAC4DSMT4

更新时间： 2024-01-03 16:14:55
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置三端双向交流开关
页数 文件大小 规格书
8页 84K
描述
Triacs Silicon Bidirectional Thyristors

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中文翻译

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MAC4DSMT4 技术参数

是否无铅： 含铅生命周期：Active
零件包装代码：TO-252包装说明：LEAD FREE, PLASTIC, CASE 369C, DPAK-3
针数：3Reach Compliance Code：unknown
风险等级：5.82外壳连接：MAIN TERMINAL 2
配置：SINGLEJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：NOT SPECIFIED
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：COMMERCIAL最大均方根通态电流：4 A
断态重复峰值电压：600 V表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
触发设备类型：TRIAC

MAC4DSMT4 数据手册

 浏览型号MAC4DSMT4的Datasheet PDF文件第2页浏览型号MAC4DSMT4的Datasheet PDF文件第3页浏览型号MAC4DSMT4的Datasheet PDF文件第4页浏览型号MAC4DSMT4的Datasheet PDF文件第5页浏览型号MAC4DSMT4的Datasheet PDF文件第6页浏览型号MAC4DSMT4的Datasheet PDF文件第7页 
MAC4DSM, MAC4DSN  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed for high volume, low cost, industrial and consumer  
applications such as motor control; process control; temperature, light  
and speed control.  
http://onsemi.com  
Features  
TRIACS  
4.0 AMPERES RMS  
600 − 800 VOLTS  
• Small Size Surface Mount DPAK Package  
• Passivated Die for Reliability and Uniformity  
• Blocking Voltage to 800 V  
• On−State Current Rating of 4.0 Amperes RMS at 108°C  
• Low IGT − 10 mA Maximum in 3 Quadrants  
• High Immunity to dv/dt − 50 V/ꢀ s at 125°C  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
MT2  
MT1  
G
MARKING  
DIAGRAMS  
• Pb−Free Packages are Available  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
DPAK  
CASE 369C  
STYLE 6  
J
YWW  
AC  
4DSxG  
Rating  
Symbol  
Value  
Unit  
2
1
Peak Repetitive Off−State Voltage  
V
V
3
DRM,  
(Note 1) (T = −40 to 125°C, Sine  
V
RRM  
J
Wave, 50 to 60 Hz, Gate Open)  
4
MAC4DSM  
MAC4DSN  
600  
800  
DPAK−3  
CASE 369D  
STYLE 6  
YWW  
AC  
4DSxG  
On−State RMS Current  
(Full Cycle Sine Wave, 60 Hz,  
= 108°C)  
I
4.0  
A
A
T(RMS)  
1
T
C
2
3
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
T = 125°C)  
J
I
TSM  
40  
Y
WW  
= Year  
= Work Week  
AC4DSx = Device Code  
x= M or N  
2
2
Circuit Fusing Consideration  
(t = 8.3 msec)  
I t  
6.6  
0.5  
0.1  
0.2  
5.0  
A sec  
G
= Pb−Free Package  
Peak Gate Power  
P
W
W
A
GM  
(Pulse Width ≤ 10 ꢀ sec, T = 108°C)  
C
Average Gate Power  
P
G(AV)  
PIN ASSIGNMENT  
Main Terminal 1  
Main Terminal 2  
Gate  
(t = 8.3 msec, T = 108°C)  
C
1
Peak Gate Current  
I
GM  
2
3
4
(Pulse Width ≤ 10 ꢀ sec, T = 108°C)  
C
Peak Gate Voltage  
V
V
GM  
(Pulse Width ≤ 10 ꢀ sec, T = 108°C)  
C
Main Terminal 2  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 125  
−40 to 150  
°C  
°C  
J
T
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the device are exceeded.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 5  
MAC4DSM/D  
 
12345678

中文翻译

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MAC4DSMT4 替代型号

型号 品牌 替代类型 描述 数据表
MAC4DSNT4G ONSEMI

完全替代

 Triacs Silicon Bidirectional Thyristors
MAC4DSMT4G ONSEMI

完全替代

 Triacs Silicon Bidirectional Thyristors
MAX810LTRG ONSEMI

类似代替

 Very Low Supply Current 3−Pin Microprocessor Reset Monitors

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 		800V, 4A, TRIAC, CASE 369, DPAK-3
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