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SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
•
Sensitive Gate Triggering in Three Trigger Modes for AC Triggering on Sinking
Current Sources (MAC310 Series)
TRIACs
10 AMPERES RMS
200 thru 600 VOLTS
•
Four Mode Triggering (10 mA) for Drive Circuits that Source Current (MAC310A
Series)
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation
•
•
•
Center Gate Geometry for Uniform Current Spreading
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
C
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage (T = –40 to 110°C,
V
DRM
Volts
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC310-4, MAC310A4
200
400
600
MAC310-6, MAC310A6
MAC310-8, MAC310A8
On-State RMS Current (T = 80°C)
Full Cycle Sine Wave 50 to 60 Hz
I
10
Amps
Amps
C
T(RMS)
Peak Non-repetitive Surge Current
I
100
TSM
(One Full Cycle 60 Hz, T = 110°C)
J
2
I t
2
A s
Circuit Fusing (t = 8.3 ms)
40
Peak Gate Current (t
Peak Gate Voltage (t
Peak Gate Power (t
2 µs)
2 µs)
2 µs)
I
±2
±10
Amps
Volts
GM
V
P
GM
GM
20
Watts
Watts
°C
Average Gate Power (T = 80°C, t
8.3 ms)
P
0.5
C
G(AV)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
T
J
–40 to 110
–40 to 150
8
T
°C
stg
—
in-lb
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant
(continued)
DRM
current source such that the voltage ratings of the devices are exceeded.
1
Motorola Thyristor Device Data
Motorola, Inc. 1995