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MAC229A4FP PDF预览

MAC229A4FP

更新时间: 2024-01-12 23:34:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
4页 95K
描述
TRIACs 8 AMPERES RMS 200 thru 800 VOLTS

MAC229A4FP 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.1Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
最大直流栅极触发电流:5 mA最大直流栅极触发电压:2 V
最大维持电流:15 mAJESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大漏电流:2 mA
元件数量:1端子数量:3
最高工作温度:110 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:8 A
重复峰值关态漏电流最大值:10 µA断态重复峰值电压:200 V
子类别:TRIACs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:TRIACBase Number Matches:1

MAC229A4FP 数据手册

 浏览型号MAC229A4FP的Datasheet PDF文件第2页浏览型号MAC229A4FP的Datasheet PDF文件第3页浏览型号MAC229A4FP的Datasheet PDF文件第4页 
Order this document  
by MAC229AFP/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Triode Thyristors  
. . . designed primarily for industrial and consumer applications for full wave control of  
ac loads such as appliance controls, heater controls, motor controls, and other power  
switching applications.  
TRIACs  
8 AMPERES RMS  
200 thru 800 VOLTS  
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal resistance and High  
Heat Dissipation  
Center Gate Geometry for Uniform Current Spreading  
Gate Triggering Guaranteed in Three Modes (MAC229FP Series) or Four Modes  
(MAC229AFP Series)  
MT2  
MT1  
G
CASE 221C-02  
STYLE 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage  
(T = –40 to 110°C,  
J
V
DRM  
Volts  
1/2 Sine Wave 50 to 60 Hz, Gate Open)  
MAC229-4FP, MAC229A4FP  
200  
400  
600  
800  
MAC229-6FP, MAC229A6FP  
MAC229-8FP, MAC229A8FP  
MAC229-10FP, MAC229A10FP  
On-State RMS Current (T = 80°C)  
Full Cycle Sine Wave 50 to 60 Hz  
I
8
Amps  
Amps  
C
T(RMS)  
Peak Non-repetitive Surge Current  
I
80  
26  
TSM  
(One Full Cycle 60 Hz, T = 110°C)  
J
2
I t  
2
A s  
Circuit Fusing  
(t = 8.3 ms)  
Peak Gate Current (t  
Peak Gate Voltage (t  
Peak Gate Power (t  
Average Gate Power  
2 µs)  
2 µs)  
2 µs)  
I
±2  
±10  
20  
Amps  
Volts  
GM  
V
GM  
GM  
P
Watts  
Watts  
P
0.5  
G(AV)  
(T = 80°C, t  
8.3 ms)  
C
Operating Junction Temperature Range  
Storage Temperature Range  
Mounting Torque  
T
–40 to 110  
–40 to 150  
8
°C  
°C  
J
T
stg  
in. lb.  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
2. The casetemperature referencepoint for allTC measurements is a point onthe center lead of the packageas closeas possibleto theplastic  
body.  
Motorola, Inc. 1995  

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