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MAC228A10FP PDF预览

MAC228A10FP

更新时间: 2024-02-08 15:29:10
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
4页 95K
描述
TRIACs 8 AMPERES RMS 200 thru 800 VOLTS

MAC228A10FP 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.58其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
最大直流栅极触发电流:5 mA最大直流栅极触发电压:2 V
最大维持电流:15 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:110 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:8 A
重复峰值关态漏电流最大值:10 µA断态重复峰值电压:800 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:TRIAC
Base Number Matches:1

MAC228A10FP 数据手册

 浏览型号MAC228A10FP的Datasheet PDF文件第2页浏览型号MAC228A10FP的Datasheet PDF文件第3页浏览型号MAC228A10FP的Datasheet PDF文件第4页 
Order this document  
by MAC228FP/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Triode Thyristors  
. . . designed primarily for industrial and consumer applications for full wave control of  
ac loads such as appliance controls, heater controls, motor controls, and other power  
switching applications.  
Four Mode Triggering for Drive Circuits that Source Current  
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal resistance and High  
Heat Dissipation  
TRIACs  
8 AMPERES RMS  
200 thru 800 VOLTS  
Center Gate Geometry for Uniform Current Spreading  
MT2  
MT1  
G
CASE 221C-02  
STYLE 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage  
(T = –40 to 110°C  
J
V
DRM  
Volts  
1/2 Sine Wave 50 to 60 Hz, Gate Open)  
MAC228-4FP, MAC228A4FP  
200  
400  
600  
800  
MAC228-6FP, MAC228A6FP  
MAC228-8FP, MAC228A8FP  
MAC228-10FP, MAC228A10FP  
On-State RMS Current (T = 80°C)  
Full Cycle Sine Wave 50 to 60 Hz  
I
8
Amps  
Amps  
C
T(RMS)  
Peak Non-repetitive Surge Current  
I
80  
26  
TSM  
(One Full Cycle 60 Hz, T = 110°C)  
J
2
I t  
2
A s  
Circuit Fusing  
(t = 8.3 ms)  
Peak Gate Current (t  
Peak Gate Voltage (t  
Peak Gate Power (t  
2 µs)  
2 µs)  
2 µs)  
I
±2  
±10  
Amps  
Volts  
Watts  
Watts  
°C  
GM  
V
P
GM  
GM  
20  
Average Gate Power (T = 80°C, t  
8.3 ms)  
P
0.5  
C
G(AV)  
Operating Junction Temperature Range  
Storage Temperature Range  
Mounting Torque  
T
J
–40 to 110  
–40 to 150  
8
T
°C  
stg  
in. lb.  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic  
body.  
Motorola, Inc. 1995  

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