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MAC223FP

更新时间： 2024-02-10 02:11:34

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Silicon Bidirectional Triode Thyristors

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MAC223FP 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.58	Is Samacsys：	N
最高工作温度：	110 °C	最低工作温度：	-40 °C
触发设备类型：	TRIAC	Base Number Matches：	1

MAC223FP 数据手册

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by MAC223FP/D

SEMICONDUCTOR TECHNICAL DATA

Silicon Bidirectional Triode Thyristors

. . . designed primarily for full-wave ac control applications, such as lighting systems,

heater controls, motor controls and power supplies; or wherever full-wave silicon-

gate-controlled devices are needed.

ISOLATED TRIACs

THYRISTORS

25 AMPERES RMS

200 thru 800 VOLTS

•

Off-State Voltages to 800 Volts

All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability

Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat

Dissipation

•

Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or

Four Modes (MAC223AFP Series)

MT2

MT1

CASE 221C-02

STYLE 3

MAXIMUM RATINGS (T = 25° unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

Peak Repetitive Off-State Voltage (T = –40 to +125°C,

DRM

Volts

1/2 Sine Wave 50 to 60 Hz, Gate Open)

MAC223-4FP, MAC223A4FP

200

400

600

800

MAC223-6FP, MAC223A6FP

MAC223-8FP, MAC223A8FP

MAC223-10FP, MAC223A10FP

(2)

On-State RMS Current (T = +80°C) Full Cycle Sine Wave 50 to 60 Hz

Amps

T(RMS)

Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T = 80°C,

250

TSM

preceded and followed by rated current)

I t

A s

Circuit Fusing (t = 8.3 ms)

260

Peak Gate Power (t

2 µs)

Watts

Watt

Amps

Volts

°C

Average Gate Power (T = +80°C, t

8.3 ms)

0.5

G(AV)

Peak Gate Current (t

Peak Gate Voltage (t

2 µs)

±10

RMS Isolation Voltage (T = 25°C, Relative Humidity

20%)

(ISO)

1500

Operating Junction Temperature

Storage Temperature Range

Mounting Torque

–40 to +125

–40 to +150

°C

stg

—

in. lb.

1. V

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

DRM

voltage ratings of the devices are exceeded.

2. The case temperature reference point for all T measurements is a point on the center lead of the package as close as possible to the plastic

body.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

1.2

2.2

Unit

°C/W

θJC

Thermal Resistance, Case to Sink

θCS

Thermal Resistance, Junction to Ambient

θJA

Motorola Thyristor Device Data

Motorola, Inc. 1995

12 3 4

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