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SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications such as lighting sysjtems,
heater controls, motor controls and power supplies; or wherever full-wave silicon-
gate-controlled devices are needed.
TRIACs
25 AMPERES RMS
200 thru 800 VOLTS
•
•
•
Off-State Voltages to 800 Volts
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat
Dissipation
•
Gate Triggering Guaranteed in Three Modes (MAC223 Series) or Four Modes
(MAC223A Series)
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25° unless otherwise noted.)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage
V
DRM
Volts
(1)
(T = –40 to 125°C)
J
(1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC223-4, MAC223A4
MAC223-6, MAC223A6
MAC223-8, MAC223A8
MAC223-10, MAC223A10
200
400
600
800
On-State RMS Current (T = 80°C)
(Full Cycle Sine Wave 50 to 60 Hz)
I
25
Amps
Amps
C
T(RMS)
Peak Non-repetitive Surge Current
I
250
260
TSM
(One Full Cycle, 60 Hz, T = 80°C, preceded and followed by rated current)
C
2
I t
2
A s
Circuit Fusing
(t = 8.3 ms)
Peak Gate Current (t
Peak Gate Voltage (t
Peak Gate Power (t
2 µs)
2 µs)
2 µs)
I
2
Amps
Volts
Watts
Watts
°C
GM
V
P
±10
20
GM
GM
Average Gate Power (T = 80°C, t
8.3 ms)
P
0.5
C
G(AV)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
T
J
–40 to 125
–40 to 150
8
T
°C
stg
—
in. lb.
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
1
Motorola Thyristor Device Data
Motorola, Inc. 1995