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MAC223-8 PDF预览

MAC223-8

更新时间: 2024-11-06 22:35:23
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摩托罗拉 - MOTOROLA 可控硅三端双向交流开关局域网
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4页 86K
描述
TRIACs 25 AMPERES RMS 200 thru 800 VOLTS

MAC223-8 数据手册

 浏览型号MAC223-8的Datasheet PDF文件第2页浏览型号MAC223-8的Datasheet PDF文件第3页浏览型号MAC223-8的Datasheet PDF文件第4页 
Order this document  
by MAC223/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Triode Thyristors  
. . . designed primarily for full-wave ac control applications such as lighting sysjtems,  
heater controls, motor controls and power supplies; or wherever full-wave silicon-  
gate-controlled devices are needed.  
TRIACs  
25 AMPERES RMS  
200 thru 800 VOLTS  
Off-State Voltages to 800 Volts  
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability  
Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat  
Dissipation  
Gate Triggering Guaranteed in Three Modes (MAC223 Series) or Four Modes  
(MAC223A Series)  
MT2  
MT1  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25° unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off-State Voltage  
V
DRM  
Volts  
(1)  
(T = –40 to 125°C)  
J
(1/2 Sine Wave 50 to 60 Hz, Gate Open)  
MAC223-4, MAC223A4  
MAC223-6, MAC223A6  
MAC223-8, MAC223A8  
MAC223-10, MAC223A10  
200  
400  
600  
800  
On-State RMS Current (T = 80°C)  
(Full Cycle Sine Wave 50 to 60 Hz)  
I
25  
Amps  
Amps  
C
T(RMS)  
Peak Non-repetitive Surge Current  
I
250  
260  
TSM  
(One Full Cycle, 60 Hz, T = 80°C, preceded and followed by rated current)  
C
2
I t  
2
A s  
Circuit Fusing  
(t = 8.3 ms)  
Peak Gate Current (t  
Peak Gate Voltage (t  
Peak Gate Power (t  
2 µs)  
2 µs)  
2 µs)  
I
2
Amps  
Volts  
Watts  
Watts  
°C  
GM  
V
P
±10  
20  
GM  
GM  
Average Gate Power (T = 80°C, t  
8.3 ms)  
P
0.5  
C
G(AV)  
Operating Junction Temperature Range  
Storage Temperature Range  
Mounting Torque  
T
J
–40 to 125  
–40 to 150  
8
T
°C  
stg  
in. lb.  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
Motorola, Inc. 1995  

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