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MAC218-4FP PDF预览

MAC218-4FP

更新时间: 2024-01-31 08:52:23
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摩托罗拉 - MOTOROLA 栅极可控硅三端双向交流开关局域网
页数 文件大小 规格书
4页 95K
描述
ISOLATED TRIACs THYRISTORS 8 AMPERES RMS 200 thru 800 VOLTS

MAC218-4FP 数据手册

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Order this document  
by MAC218FP/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Thyristors  
ISOLATED TRIACs  
THYRISTORS  
8 AMPERES RMS  
200 thru 800 VOLTS  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies.  
Blocking Voltage to 800 Volts  
Glass Passivated Junctions for Greater Parameter Uniformity and Stability  
Isolated TO-220 Type Package for Ease of Mounting  
Gate Triggering in Three Modes (MAC218FP Series) or  
Four Modes (MAC218AFP Series)  
MT2  
MT1  
G
CASE 221C-02  
STYLE 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage (T = –40 to +125°C)  
V
DRM  
Volts  
J
(1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC218-4FP, MAC218A4FP  
MAC218-6FP, MAC218A6FP  
200  
400  
600  
800  
MAC218-8FP, MAC218A8FP  
MAC218-10FP, MAC218A10FP  
(2)  
On-State RMS Current (T = +80°C) Full Cycle Sine Wave 50 to 60 Hz  
I
8
Amps  
Amps  
C
T(RMS)  
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz,  
I
100  
TSM  
preceded and followed by rated current, T = 80°C)  
C
2
2
Circuit Fusing (t = 8.3 ms)  
I t  
40  
16  
A s  
Peak Gate Power (T = +80°C, Pulse Width = 2 µs)  
P
Watts  
Watt  
Amps  
Volts  
°C  
C
GM  
Average Gate Power (T = +80°C, t = 8.3 ms)  
P
0.35  
C
G(AV)  
Peak Gate Current (Pulse Width = 1 µs)  
I
4
GM  
RMS Isolation Voltage (T = 25°C, Relative Humidity  
20%)  
V
1500  
A
(ISO)  
Operating Junction Temperature  
Storage Temperature Range  
T
J
–40 to +125  
–40 to +150  
T
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.2  
Unit  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Sink  
Thermal Resistance, Junction to Ambient  
R
θJC  
R
2.2 (typ)  
60  
θCS  
R
θJA  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
2. ThecasetemperaturereferencepointforallT measurementsisapointonthecenterleadofthepackageas closeaspossibletotheplastic  
C
body.  
Motorola, Inc. 1995  

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