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MAC218-4-AF PDF预览

MAC218-4-AF

更新时间: 2024-11-01 13:01:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
4页 86K
描述
TRIAC, 200V V(DRM), 8A I(T)RMS, TO-220AB,

MAC218-4-AF 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.78
Is Samacsys:N外壳连接:MAIN TERMINAL 2
配置:SINGLE最大直流栅极触发电流:50 mA
最大直流栅极触发电压:2 V最大维持电流:50 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:8 A重复峰值关态漏电流最大值:10 µA
断态重复峰值电压:200 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:TRIACBase Number Matches:1

MAC218-4-AF 数据手册

 浏览型号MAC218-4-AF的Datasheet PDF文件第2页浏览型号MAC218-4-AF的Datasheet PDF文件第3页浏览型号MAC218-4-AF的Datasheet PDF文件第4页 
Order this document  
by MAC218/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Thyristors  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies.  
TRIACs  
Blocking Voltage to 800 Volts  
8 AMPERES RMS  
200 thru 800 VOLTS  
Glass Passivated Junctions for Greater Parameter Uniformity and Stability  
TO-220 Construction Low Thermal Resistance, High Heat Dissipation and  
Durability  
Gate Triggering Guaranteed in Three Modes (MAC218 Series) or Four Modes  
(MAC218A Series)  
MT2  
MT1  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage  
V
DRM  
Volts  
(Gate Open, T = 25 to 125°C)  
MAC218-4, MAC218A4  
MAC218-6, MAC218A6  
MAC218-8, MAC218A8  
MAC218-10, MAC218A10  
200  
400  
600  
800  
J
On-State Current RMS  
(Conduction Angle = 360°, T = +80°C)  
I
8
100  
40  
Amps  
Amps  
T(RMS)  
C
Peak Non-repetitive Surge Current  
(One Full Cycle, 60 Hz, T = 80°C, preceded and followed by rated current)  
I
TSM  
C
2
I t  
2
A s  
Fusing Current  
(t = 8.3 ms)  
Peak Gate Power  
(T = +80°C, Pulse Width = 2 µs)  
C
P
16  
Watts  
Watt  
GM  
Average Gate Power  
(T = +80°C, t = 8.3 ms)  
C
P
0.35  
4
G(AV)  
Peak Gate Trigger Current  
(Pulse Width = 1 µs)  
I
Amps  
GTM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
–40 to +125  
–40 to +150  
°C  
°C  
J
T
stg  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
Motorola, Inc. 1995  

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