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MAC218-10FP PDF预览

MAC218-10FP

更新时间: 2024-02-28 20:36:54
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
4页 95K
描述
ISOLATED TRIACs THYRISTORS 8 AMPERES RMS 200 thru 800 VOLTS

MAC218-10FP 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.78Is Samacsys:N
外壳连接:MAIN TERMINAL 2配置:SINGLE
最大直流栅极触发电流:50 mA最大直流栅极触发电压:2 V
最大维持电流:50 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:8 A
重复峰值关态漏电流最大值:10 µA断态重复峰值电压:800 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:TRIAC
Base Number Matches:1

MAC218-10FP 数据手册

 浏览型号MAC218-10FP的Datasheet PDF文件第2页浏览型号MAC218-10FP的Datasheet PDF文件第3页浏览型号MAC218-10FP的Datasheet PDF文件第4页 
Order this document  
by MAC218FP/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Thyristors  
ISOLATED TRIACs  
THYRISTORS  
8 AMPERES RMS  
200 thru 800 VOLTS  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies.  
Blocking Voltage to 800 Volts  
Glass Passivated Junctions for Greater Parameter Uniformity and Stability  
Isolated TO-220 Type Package for Ease of Mounting  
Gate Triggering in Three Modes (MAC218FP Series) or  
Four Modes (MAC218AFP Series)  
MT2  
MT1  
G
CASE 221C-02  
STYLE 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off-State Voltage (T = –40 to +125°C)  
V
DRM  
Volts  
J
(1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC218-4FP, MAC218A4FP  
MAC218-6FP, MAC218A6FP  
200  
400  
600  
800  
MAC218-8FP, MAC218A8FP  
MAC218-10FP, MAC218A10FP  
(2)  
On-State RMS Current (T = +80°C) Full Cycle Sine Wave 50 to 60 Hz  
I
8
Amps  
Amps  
C
T(RMS)  
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz,  
I
100  
TSM  
preceded and followed by rated current, T = 80°C)  
C
2
2
Circuit Fusing (t = 8.3 ms)  
I t  
40  
16  
A s  
Peak Gate Power (T = +80°C, Pulse Width = 2 µs)  
P
Watts  
Watt  
Amps  
Volts  
°C  
C
GM  
Average Gate Power (T = +80°C, t = 8.3 ms)  
P
0.35  
C
G(AV)  
Peak Gate Current (Pulse Width = 1 µs)  
I
4
GM  
RMS Isolation Voltage (T = 25°C, Relative Humidity  
20%)  
V
1500  
A
(ISO)  
Operating Junction Temperature  
Storage Temperature Range  
T
J
–40 to +125  
–40 to +150  
T
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.2  
Unit  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Sink  
Thermal Resistance, Junction to Ambient  
R
θJC  
R
2.2 (typ)  
60  
θCS  
R
θJA  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
2. ThecasetemperaturereferencepointforallT measurementsisapointonthecenterleadofthepackageas closeaspossibletotheplastic  
C
body.  
Motorola, Inc. 1995  

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