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MAC212A8D

更新时间： 2024-09-21 04:17:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 63K
描述
Triacs Silicon Bidirectional Thyristors

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中文翻译

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MAC212A8D 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：CASE 221A-07, 3 PIN
针数：3Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：5.25
外壳连接：MAIN TERMINAL 2配置：SINGLE
最大直流栅极触发电流：50 mA最大直流栅极触发电压：2 V
最大维持电流：50 mAJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
最大漏电流：2 mA元件数量：1
端子数量：3最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：225认证状态：Not Qualified
最大均方根通态电流：12 A断态重复峰值电压：600 V
子类别：TRIACs表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：4 QUADRANT LOGIC LEVEL TRIACBase Number Matches：1

MAC212A8D 数据手册

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MAC212A8, MAC212A10  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave ac control applications, such as  
light dimmers, motor controls, heating controls and power supplies; or  
wherever full-wave silicon gate controlled solid-state devices are  
needed. Triac type thyristors switch from a blocking to a conducting  
state for either polarity of applied anode voltage with positive or  
negative gate triggering.  
http://onsemi.com  
TRIACS  
12 AMPERES RMS  
600 thru 800 VOLTS  
Features  
• Blocking Voltage to 800 Volts  
• All Diffused and Glass Passivated Junctions for Greater Parameter  
MT2  
MT1  
Uniformity and Stability  
G
• Small, Rugged, Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
• Gate Triggering Guaranteed in Four Modes  
MARKING  
DIAGRAM  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
MAC212AxG  
AYWW  
Peak Repetitive Off−State Voltage (Note 1)  
(T = −40 to +125°C, Sine Wave 50 to 60 Hz,  
V
V
DRM,  
V
J
RRM  
Gate Open)  
MAC212A8  
MAC212A10  
600  
800  
TO−220AB  
CASE 221A−07  
STYLE 4  
1
2
3
On-State RMS Current (T = +85°C)  
Full Cycle Sine Wave 50 to 60 Hz  
I
12  
A
A
C
T(RMS)  
x
A
Y
= 8 or 10  
Peak Non−repetitive Surge Current (One  
Full Cycle Sine Wave, 60 Hz, T = +25°C)  
Preceded and followed by rated current  
Circuit Fusing Considerations (t = 8.3 ms)  
Peak Gate Power  
I
100  
TSM  
= Assembly Location  
= Year  
C
WW = Work Week  
2
2
I t  
40  
20  
A s  
G
= Pb−Free Package  
P
W
W
A
GM  
(T = +85°C, Pulse Width = 10 ms)  
C
PIN ASSIGNMENT  
Average Gate Power  
(T = +85°C, t = 8.3 ms)  
P
0.35  
2.0  
G(AV)  
1
Main Terminal 1  
C
2
3
4
Main Terminal 2  
Gate  
Peak Gate Current  
(T = +85°C, Pulse Width = 10 ms)  
I
GM  
C
Main Terminal 2  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125 °C  
−40 to +150 °C  
J
T
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MAC212A8D  
TO−220AB  
500 Units / Box  
500 Units / Box  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
MAC212A8DG  
TO−220AB  
(Pb−Free)  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
MAC212A10  
TO−220AB  
500 Units / Box  
500 Units / Box  
MAC212A10G  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 2  
MAC212A8/D  
 
123456

中文翻译

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MAC212A8DG ONSEMI

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 		Triacs Silicon Bidirectional Thyristors
MAC212A8-DW MOTOROLA

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 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,
MAC212A8FP MOTOROLA

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 		ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS
MAC212A8G ONSEMI

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 		Silicon Bidirectional Thyristors
MAC212A8G LITTELFUSE

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 		该三端双向可控硅主要用于全波交流控制应用，例如灯光调节器、电机控制、加热控制与电源；或用于
MAC212A8-N MOTOROLA

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 		暂无描述
MAC212A8-S MOTOROLA

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 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,
MAC212A8-U MOTOROLA

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 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,
MAC212A8-U2 MOTOROLA

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 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220, 2 PIN
MAC212A8-UA MOTOROLA

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 		TRIAC, 600V V(DRM), 12A I(T)RMS, TO-220AB,

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