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MAC212A8-N PDF预览

MAC212A8-N

更新时间: 2024-11-19 13:10:15
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摩托罗拉 - MOTOROLA 栅极可控硅三端双向交流开关LORA局域网
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MAC212A8-N 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Thyristors  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
TRIACs  
12 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
MT1  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes  
(MAC212A Series)  
MT2  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Repetitive Peak Off-State Voltage (T = –40 to +125°C,  
V
DRM  
Volts  
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)  
MAC212-4, MAC212A4  
200  
400  
600  
800  
MAC212-6, MAC212A6  
MAC212-8, MAC212A8  
MAC212-10, MAC212A10  
On-State Current RMS (T = +85°C)  
Full Cycle Sine Wave 50 to 60 Hz  
I
12  
Amp  
Amp  
C
T(RMS)  
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, T = +85°C)  
preceded and followed by Rated Current  
I
100  
C
TSM  
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
40  
20  
A s  
Peak Gate Power (T = +85°C, Pulse Width = 10 µs)  
P
Watts  
Watt  
Amp  
°C  
C
GM  
Average Gate Power (T = +85°C, t = 8.3 ms)  
P
0.35  
C
G(AV)  
Peak Gate Current (T = +85°C, Pulse Width = 10 µs)  
I
2
C
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
–40 to +125  
–40 to +150  
T
°C  
stg  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
3–83  
Motorola Thyristor Device Data  

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