SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
TRIACs
12 AMPERES RMS
200 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
MT1
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes
(MAC212A Series)
MT2
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
Repetitive Peak Off-State Voltage (T = –40 to +125°C,
V
DRM
Volts
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4, MAC212A4
200
400
600
800
MAC212-6, MAC212A6
MAC212-8, MAC212A8
MAC212-10, MAC212A10
On-State Current RMS (T = +85°C)
Full Cycle Sine Wave 50 to 60 Hz
I
12
Amp
Amp
C
T(RMS)
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, T = +85°C)
preceded and followed by Rated Current
I
100
C
TSM
2
2
Circuit Fusing Considerations (t = 8.3 ms)
I t
40
20
A s
Peak Gate Power (T = +85°C, Pulse Width = 10 µs)
P
Watts
Watt
Amp
°C
C
GM
Average Gate Power (T = +85°C, t = 8.3 ms)
P
0.35
C
G(AV)
Peak Gate Current (T = +85°C, Pulse Width = 10 µs)
I
2
C
GM
Operating Junction Temperature Range
Storage Temperature Range
T
J
–40 to +125
–40 to +150
T
°C
stg
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
3–83
Motorola Thyristor Device Data