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MAC212A6FP PDF预览

MAC212A6FP

更新时间: 2024-02-12 14:03:48
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极触发装置可控硅三端双向交流开关LORA局域网
页数 文件大小 规格书
6页 116K
描述
ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS

MAC212A6FP 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.63外壳连接:MAIN TERMINAL 2
配置:SINGLE最大直流栅极触发电流:50 mA
最大直流栅极触发电压:2 V最大维持电流:50 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:12 A重复峰值关态漏电流最大值:10 µA
断态重复峰值电压:400 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:TRIACBase Number Matches:1

MAC212A6FP 数据手册

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Order this document  
by MAC212FP/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Thyristors  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
ISOLATED TRIACs  
THYRISTORS  
12 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or  
Four Modes (MAC212AFP Series)  
MT2  
MT1  
CASE 221C-02  
STYLE 3  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Repetitive Peak Off-State Voltage (T = –40 to +125°C,  
V
DRM  
Volts  
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)  
MAC212-4FP,MAC212A4FP  
MAC212-6FP,MAC212A6FP  
MAC212-8FP,MAC212A8FP  
MAC212-10FP, MAC212A10FP  
200  
400  
600  
800  
(2)  
On-State RMS Current (T = +85°C) Full Cycle Sine Wave 50 to 60 Hz  
I
12  
Amps  
Amps  
C
T(RMS)  
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T = +85°C)  
I
100  
C
TSM  
preceded and followed by rated current  
2
2
Circuit Fusing (t = 8.3 ms)  
I t  
40  
20  
A s  
Peak Gate Power (T = +85°C, Pulse Width = 10 µs)  
P
Watts  
Watt  
Amps  
Volts  
°C  
C
GM  
Average Gate Power (T = +85°C, t = 8.3 ms)  
P
0.35  
C
G(AV)  
Peak Gate Current (T = +85°C, Pulse Width = 10 µs)  
I
2
C
GM  
RMS Isolation Voltage (T = 25°C, Relative Humidity  
20%)  
V
1500  
A
(ISO)  
Operating Junction Temperature  
Storage Temperature Range  
T
J
–40 to +125  
–40 to +150  
T
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.1  
Unit  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Sink  
Thermal Resistance, Junction to Ambient  
R
θJC  
R
2.2 (typ)  
60  
θCS  
R
θJA  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
2. ThecasetemperaturereferencepointforallT measurementsisapointonthecenterleadofthepackageas closeaspossibletotheplastic  
C
body.  
Motorola, Inc. 1995  

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