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MAC212A6 PDF预览

MAC212A6

更新时间: 2024-10-26 22:46:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极触发装置可控硅三端双向交流开关LORA局域网
页数 文件大小 规格书
4页 73K
描述
TRIACs 12 AMPERES RMS 200 thru 800 VOLTS

MAC212A6 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.29
外壳连接:MAIN TERMINAL 2配置:SINGLE
关态电压最小值的临界上升速率:100 V/us最大直流栅极触发电流:50 mA
最大直流栅极触发电压:2 V最大维持电流:50 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大漏电流:2 mA
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:12 A
重复峰值关态漏电流最大值:10 µA断态重复峰值电压:400 V
子类别:TRIACs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:TRIACBase Number Matches:1

MAC212A6 数据手册

 浏览型号MAC212A6的Datasheet PDF文件第2页浏览型号MAC212A6的Datasheet PDF文件第3页浏览型号MAC212A6的Datasheet PDF文件第4页 
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Thyristors  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
TRIACs  
12 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
MT1  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes  
(MAC212A Series)  
MT2  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Repetitive Peak Off-State Voltage (T = –40 to +125°C,  
V
DRM  
Volts  
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)  
MAC212-4, MAC212A4  
200  
400  
600  
800  
MAC212-6, MAC212A6  
MAC212-8, MAC212A8  
MAC212-10, MAC212A10  
On-State Current RMS (T = +85°C)  
Full Cycle Sine Wave 50 to 60 Hz  
I
12  
Amp  
Amp  
C
T(RMS)  
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, T = +85°C)  
preceded and followed by Rated Current  
I
100  
C
TSM  
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
40  
20  
A s  
Peak Gate Power (T = +85°C, Pulse Width = 10 µs)  
P
Watts  
Watt  
Amp  
°C  
C
GM  
Average Gate Power (T = +85°C, t = 8.3 ms)  
P
0.35  
C
G(AV)  
Peak Gate Current (T = +85°C, Pulse Width = 10 µs)  
I
2
C
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
–40 to +125  
–40 to +150  
T
°C  
stg  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
3–83  
Motorola Thyristor Device Data  

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