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MAC210A8G

更新时间： 2024-09-06 04:17:07
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置三端双向交流开关局域网
页数 文件大小 规格书
6页 64K
描述
Triacs Silicon Bidirectional Thyristors

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中文翻译

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MAC210A8G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.30.00.80Factory Lead Time：1 week
风险等级：5.15外壳连接：MAIN TERMINAL 2
配置：SINGLE最大直流栅极触发电流：50 mA
最大直流栅极触发电压：2 V最大维持电流：50 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大漏电流：2 mA
元件数量：1端子数量：3
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大均方根通态电流：10 A
断态重复峰值电压：600 V子类别：TRIACs
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40触发设备类型：TRIAC
Base Number Matches：1

MAC210A8G 数据手册

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MAC210A8, MAC210A10  
Triacs  
Silicon Bidirectional Thyristors  
Designed primarily for full-wave AC control applications, such as  
light dimmers, motor controls, heating controls and power supplies; or  
wherever full−wave silicon gate controlled solid−state devices are  
needed. Triac type thyristors switch from a blocking to a conducting  
state for either polarity of applied main terminal voltage with positive  
or negative gate triggering.  
http://onsemi.com  
TRIACS  
10 AMPERES RMS  
600 thru 800 VOLTS  
Features  
• Blocking Voltage to 600 Volts  
• All Diffused and Glass Passivated Junctions for Greater Parameter  
Uniformity and Stability  
MT2  
MT1  
• Small, Rugged, Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
• Gate Triggering Guaranteed in Four Modes (Quadrants)  
• Pb−Free Packages are Available*  
G
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
(T = −40 to +125°C, Sine Wave 50 to 60 Hz,  
J
MAC210AxG  
AYWW  
Gate Open)  
MAC210A8  
600  
800  
MAC210A10  
On−State RMS Current (T = +70°C)  
I
10  
A
A
C
T(RMS)  
TO−220AB  
CASE 221A−07  
STYLE 4  
Full Cycle Sine Wave 50 to 60 Hz  
1
2
Peak Non−Repetitive Surge Current  
(One Full Cycle, Sine Wave 60 Hz,  
I
100  
3
TSM  
T
= +25°C)  
C
x
A
Y
= 8 or 10  
= Assembly Location  
= Year  
Preceded and followed by rated current  
Circuit Fusing Considerations, (t = 8.3 ms)  
Peak Gate Power  
2
2
I t  
40  
20  
A s  
P
W
W
A
WW = Work Week  
G
GM  
(T = +70°C, Pulse Width = 10 ms)  
= Pb−Free Package  
C
Average Gate Power  
(T = +70°C, t = 8.3 ms)  
P
0.35  
2.0  
G(AV)  
C
PIN ASSIGNMENT  
Main Terminal 1  
Main Terminal 2  
Gate  
Peak Gate Current  
I
GM  
1
(T = +70°C, Pulse Width = 10 ms)  
C
2
3
4
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
−40 to +125 °C  
−40 to +150 °C  
T
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Main Terminal 2  
ORDERING INFORMATION  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
Device  
Package  
Shipping  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
MAC210A8  
TO−220AB  
500 Units/Box  
500 Units/Box  
MAC210A8G  
TO−220AB  
(Pb−Free)  
MAC210A10  
TO−220AB  
500 Units/Box  
500 Units/Box  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
MAC210A10G  
TO−220AB  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 2  
MAC210A8/D  
 
123456

中文翻译

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MAC210A8G 替代型号

型号 品牌 替代类型 描述 数据表
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