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MAC210A6-W PDF预览

MAC210A6-W

更新时间: 2024-12-01 13:10:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 可控硅三端双向交流开关
页数 文件大小 规格书
4页 70K
描述
400V, 10A, TRIAC, TO-220AB

MAC210A6-W 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.58Is Samacsys:N
外壳连接:MAIN TERMINAL 2配置:SINGLE
最大直流栅极触发电流:50 mA最大直流栅极触发电压:2 V
最大维持电流:50 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:10 A
重复峰值关态漏电流最大值:10 µA断态重复峰值电压:400 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:TRIAC
Base Number Matches:1

MAC210A6-W 数据手册

 浏览型号MAC210A6-W的Datasheet PDF文件第2页浏览型号MAC210A6-W的Datasheet PDF文件第3页浏览型号MAC210A6-W的Datasheet PDF文件第4页 
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Thyristors  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
TRIACs  
10 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Gate Triggering Guaranteed in Three Modes (MAC210 Series) or Four Modes  
(MAC210A Series)  
MT2  
MT1  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Repetitive Peak Off-State Voltage  
V
DRM  
Volts  
(T = –40 to +125°C,  
J
1/2 Sine Wave 50 to 60 Hz, Gate Open)  
MAC210-4, MAC210A4  
MAC210-6, MAC210A6  
MAC210-8, MAC210A8  
MAC210-10, MAC210A10  
200  
400  
600  
800  
On-State Current RMS (T = +70°C)  
Full Cycle Sine Wave 50 to 60 Hz  
I
10  
Amps  
Amps  
C
T(RMS)  
Peak Non-repetitive Surge Current  
I
100  
TSM  
(One Full Cycle, 60 Hz, T = +70°C)  
C
Preceded and followed by Rated Current  
2
2
Circuit Fusing Considerations  
(t = 8.3 ms)  
I t  
40  
20  
A s  
Peak Gate Power  
(T = +70°C, Pulse Width = 10 µs)  
C
P
Watts  
GM  
Average Gate Power (T = +70°C, t = 8.3 ms)  
P
0.35  
2
Watt  
C
G(AV)  
Peak Gate Current  
(T = +70°C, Pulse Width = 10 µs)  
C
I
Amps  
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
–40 to +125  
–40 to +125  
°C  
°C  
J
T
stg  
(1)  
V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that  
DRM  
the voltage ratings of the devices are exceeded.  
3–75  
Motorola Thyristor Device Data  

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