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MAC15SD PDF预览

MAC15SD

更新时间: 2024-09-27 04:17:07
品牌 Logo 应用领域
安森美 - ONSEMI 可控硅
页数 文件大小 规格书
7页 141K
描述
Sensitive Gate Triacs Silicon Bidirectional Thyristors

MAC15SD 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:TO-220AB包装说明:CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.72外壳连接:MAIN TERMINAL 2
配置:SINGLE换向电压的临界上升率-最小值:8 V/us
最大直流栅极触发电流:5 mA最大直流栅极触发电压:1.5 V
最大维持电流:10 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
最大漏电流:0.01 mA元件数量:1
端子数量:3最高工作温度:110 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):240认证状态:Not Qualified
最大均方根通态电流:15 A断态重复峰值电压:400 V
子类别:TRIACs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

MAC15SD 数据手册

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MAC15SD, MAC15SM,  
MAC15SN  
Preferred Device  
Sensitive Gate Triacs  
Silicon Bidirectional Thyristors  
Designed for industrial and consumer applications for full wave  
control of AC loads such as appliance controls, heater controls, motor  
controls, and other power switching applications.  
http://onsemi.com  
TRIACS  
15 AMPERES RMS  
400 thru 800 VOLTS  
Features  
Sensitive Gate allows Triggering by Microcontrollers and other  
Logic Circuits  
MT2  
MT1  
High Immunity to dv/dt − 25 V/ms minimum at 110°C  
G
High Commutating di/dt − 8.0 A/ms minimum at 110°C  
Maximum Values of I , V and I Specified for Ease of Design  
GT GT  
H
MARKING  
DIAGRAM  
On-State Current Rating of 15 Amperes RMS at 70°C  
High Surge Current Capability − 120 Amperes  
Blocking Voltage to 800 Volts  
Rugged, Economical TO−220AB Package  
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3  
Pb−Free Packages are Available*  
MAC15SxG  
AYWW  
TO−220AB  
CASE 221A−09  
STYLE 4  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
2
3
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
x
A
Y
= D, M, or N  
= Assembly Location  
= Year  
(T = −40 to 110°C, Sine Wave, 50 to  
J
60 Hz, Gate Open)  
MAC15SD  
MAC15SM  
MAC15SN  
400  
600  
800  
WW = Work Week  
G
= Pb−Free Package  
On−State RMS Current  
(Full Cycle Sine Wave, 60Hz, T = 70°C)  
I
15  
A
A
T(RMS)  
J
PIN ASSIGNMENT  
Peak Non-repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
I
120  
TSM  
1
Main Terminal 1  
T = 110°C)  
2
3
4
Main Terminal 2  
Gate  
J
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
60  
20  
A s  
Peak Gate Power  
P
W
Main Terminal 2  
GM  
(Pulse Width 1.0 ms, T = 70°C)  
C
ORDERING INFORMATION  
Average Gate Power (t = 8.3 ms, T = 70°C)  
P
0.5  
W
C
G(AV)  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +110  
°C  
Device  
Package  
Shipping  
J
T
stg  
−40 to +150 °C  
MAC15SD  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MAC15SDG  
TO−220AB  
(Pb−Free)  
MAC15SM  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC15SMG  
TO−220AB  
(Pb−Free)  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
MAC15SN  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC15SNG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 5  
MAC15S/D  
 

MAC15SD 替代型号

型号 品牌 替代类型 描述 数据表
MAC15SDG ONSEMI

完全替代

Sensitive Gate Triacs Silicon Bidirectional Thyristors

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