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MAC15N

更新时间: 2024-11-23 04:17:07
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置三端双向交流开关局域网
页数 文件大小 规格书
6页 68K
描述
Triacs Silicon Bidirectional Thyristors

MAC15N 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.18
外壳连接:MAIN TERMINAL 2配置:SINGLE
关态电压最小值的临界上升速率:250 V/us最大直流栅极触发电流:35 mA
最大直流栅极触发电压:1.5 V最大维持电流:40 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大漏电流:2 mA
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
认证状态:Not Qualified最大均方根通态电流:15 A
断态重复峰值电压:800 V子类别:TRIACs
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30触发设备类型:TRIAC
Base Number Matches:1

MAC15N 数据手册

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MAC15M, MAC15N  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed for high performance full-wave AC control applications  
where high noise immunity and high commutating di/dt are required.  
http://onsemi.com  
Features  
Blocking Voltage to 800 Volts  
TRIACS  
On-State Current Rating of 15 Amperes RMS at 80°C  
Uniform Gate Trigger Currents in Three Modes  
High Immunity to dv/dt − 250 V/ms minimum at 125°C  
Minimizes Snubber Networks for Protection  
Industry Standard TO-220AB Package  
15 AMPERES RMS  
600 thru 800 VOLTS  
MT2  
MT1  
G
High Commutating di/dt − 9.0 A/ms minimum at 125°C  
Operational in Three Quadrants, Q1, Q2, and Q3  
Pb−Free Packages are Available*  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
MAC15xG  
AYWW  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
(−40 to 125°C, Sine Wave, 50 to 60 Hz,  
Gate Open)  
MAC15M  
MAC15N  
600  
800  
TO−220AB  
CASE 221A−09  
STYLE 4  
1
2
3
On−State RMS Current  
I
15  
A
A
T(RMS)  
(Full Cycle Sine Wave, 60 Hz, T = 80°C)  
C
x
A
Y
= M or N  
Peak Non-repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
T = 125°C)  
J
I
150  
TSM  
= Assembly Location  
= Year  
WW = Work Week  
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
93  
20  
A s  
G
= Pb−Free Package  
Peak Gate Power  
P
W
W
GM  
(Pulse Width 1.0 ms, T = 80°C)  
C
PIN ASSIGNMENT  
Average Gate Power  
P
0.5  
G(AV)  
1
Main Terminal 1  
(t = 8.3 ms, T = 80°C)  
C
2
3
4
Main Terminal 2  
Gate  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125  
−40 to +150  
°C  
°C  
J
T
stg  
Main Terminal 2  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
Device  
Package  
Shipping  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
MAC15M  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC15MG  
TO−220AB  
(Pb−Free)  
MAC15N  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC15NG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 2  
MAC15M/D  

MAC15N 替代型号

型号 品牌 替代类型 描述 数据表
Q8012RH5TP LITTELFUSE

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Alternistor TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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