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MAC12SN PDF预览

MAC12SN

更新时间: 2024-11-17 22:30:27
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
6页 78K
描述
Sensitive Gate Triacs

MAC12SN 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:CASE 221A-09, 3 PIN针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
Factory Lead Time:1 week风险等级:5.22
Is Samacsys:N外壳连接:MAIN TERMINAL 2
配置:SINGLE关态电压最小值的临界上升速率:15 V/us
最大直流栅极触发电流:5 mA最大直流栅极触发电压:1.5 V
最大维持电流:10 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:110 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
认证状态:Not Qualified最大均方根通态电流:12 A
断态重复峰值电压:800 V子类别:TRIACs
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

MAC12SN 数据手册

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MAC12SM, MAC12SN  
Preferred Device  
Sensitive Gate Triacs  
Silicon Bidirectional Thyristors  
Designed for industrial and consumer applications for full wave  
control of ac loads such as appliance controls, heater controls, motor  
controls, and other power switching applications.  
Sensitive Gate Allows Triggering by Microcontrollers and other  
Logic Circuits  
http://onsemi.com  
TRIACS  
12 AMPERES RMS  
600 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
On-State Current Rating of 12 Amperes RMS at 70°C  
High Surge Current Capability - 90 Amperes  
Rugged, Economical TO220AB Package  
Glass Passivated Junctions for Reliability and Uniformity  
Maximum Values of I , V and I Specified for Ease of Design  
GT GT  
H
MT2  
MT1  
High Commutating di/dt - 8.0 A/ms Minimum at 110°C  
Immunity to dV/dt - 15 V/msec Minimum at 110°C  
Operational in Three Quadrants: Q1, Q2, and Q3  
G
MARKING  
DIAGRAM  
Device Marking: Logo, Device Type, e.g., MAC12SM, Date Code  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MAC12xx  
ALYWW  
Rating  
Symbol Value  
Unit  
Peak Repetitive Off-State Voltage (Note 1)  
(T = -40 to 110°C, Sine Wave,  
J
V
V
V
DRM,  
RRM  
1
50 to 60 Hz, Gate Open)  
MAC12SM  
2
600  
800  
3
TO-220AB  
CASE 221A  
Style 4  
MAC12SN  
On-State RMS Current  
I
12  
90  
A
A
T(RMS)  
xx  
A
L
= Specific Device Code  
= Assembly Location  
= Wafer Lot  
(All Conduction Angles; T = 70°C)  
C
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
I
TSM  
Y
= Year  
T = 110°C)  
J
WW = Work Week  
2
2
Circuit Fusing Consideration  
(t = 8.33 ms)  
I t  
33  
16  
A sec  
PIN ASSIGNMENT  
Peak Gate Power  
(Pulse Width = 1.0 msec, T = 70°C)  
P
W
W
GM  
1
2
3
4
Main Terminal 1  
Main Terminal 2  
Gate  
C
Average Gate Power  
P
0.35  
G(AV)  
(t = 8.3 msec, T = 70°C)  
C
Operating Junction Temperature Range  
T
- 40 to  
110  
°C  
°C  
J
Main Terminal 2  
Storage Temperature Range  
T
stg  
- 40 to  
150  
ORDERING INFORMATION  
1. (V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
Device  
MAC12SM  
MAC12SN  
Package  
TO220AB  
TO220AB  
Shipping  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
50 Units/Rail  
50 Units/Rail  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
April, 2003 - Rev. 2  
MAC12SM/D  

MAC12SN 替代型号

型号 品牌 替代类型 描述 数据表
MAC12SNG ONSEMI

完全替代

Sensitive Gate Triacs Silicon Bidirectional Thyristors

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MAC137-500-AC MOTOROLA

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MAC137-500-AF MOTOROLA

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MAC137-500-AJ MOTOROLA

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TRIAC, 500V V(DRM), 8A I(T)RMS, TO-220AB,
MAC137-500-AK MOTOROLA

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TRIAC, 500V V(DRM), 8A I(T)RMS, TO-220AB,
MAC137-500-AN MOTOROLA

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TRIAC, 500V V(DRM), 8A I(T)RMS, TO-220AB,
MAC137-500-AS MOTOROLA

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500V, 8A, TRIAC, TO-220AB
MAC137-500-BA MOTOROLA

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TRIAC, 500V V(DRM), 8A I(T)RMS, TO-220AB,