5秒后页面跳转
MAC12SMG PDF预览

MAC12SMG

更新时间: 2024-11-18 04:17:07
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
5页 60K
描述
Sensitive Gate Triacs Silicon Bidirectional Thyristors

MAC12SMG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:CASE 221A-09, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80Factory Lead Time:1 week
风险等级:5.22Is Samacsys:N
外壳连接:MAIN TERMINAL 2配置:SINGLE
关态电压最小值的临界上升速率:15 V/us最大直流栅极触发电流:5 mA
最大直流栅极触发电压:1.5 V最大维持电流:10 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大漏电流:2 mA
元件数量:1端子数量:3
最高工作温度:110 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:12 A
断态重复峰值电压:600 V子类别:TRIACs
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

MAC12SMG 数据手册

 浏览型号MAC12SMG的Datasheet PDF文件第2页浏览型号MAC12SMG的Datasheet PDF文件第3页浏览型号MAC12SMG的Datasheet PDF文件第4页浏览型号MAC12SMG的Datasheet PDF文件第5页 
MAC12SM, MAC12SN  
Preferred Device  
Sensitive Gate Triacs  
Silicon Bidirectional Thyristors  
Designed for industrial and consumer applications for full wave  
control of AC loads such as appliance controls, heater controls, motor  
controls, and other power switching applications.  
http://onsemi.com  
Features  
TRIACS  
12 AMPERES RMS  
600 thru 800 VOLTS  
Sensitive Gate Allows Triggering by Microcontrollers and other  
Logic Circuits  
Blocking Voltage to 800 Volts  
On-State Current Rating of 12 Amperes RMS at 70°C  
High Surge Current Capability − 90 Amperes  
Rugged, Economical TO−220AB Package  
Glass Passivated Junctions for Reliability and Uniformity  
Maximum Values of I , V and I Specified for Ease of Design  
High Commutating di/dt − 8.0 A/ms Minimum at 110°C  
Immunity to dV/dt − 15 V/msec Minimum at 110°C  
Operational in Three Quadrants: Q1, Q2, and Q3  
Pb−Free Packages are Available*  
MT2  
MT1  
G
MARKING  
DIAGRAM  
GT GT  
H
MAC12SxG  
AYWW  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
TO−220AB  
CASE 221A−09  
STYLE 4  
Rating  
Symbol  
Value  
Unit  
1
2
Peak Repetitive Off−State Voltage (Note 1)  
(T = −40 to 110°C, Sine Wave,  
50 to 60 Hz, Gate Open)  
V
V
DRM,  
3
V
J
RRM  
MAC12SM  
MAC12SN  
600  
800  
x
= M, or N  
A
Y
= Assembly Location  
= Year  
On-State RMS Current  
(All Conduction Angles; T = 70°C)  
I
12  
A
A
T(RMS)  
C
WW = Work Week  
G
= Pb−Free Package  
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
I
TSM  
90  
T = 110°C)  
J
PIN ASSIGNMENT  
2
2
Circuit Fusing Consideration (t = 8.33 ms)  
I t  
33  
16  
A sec  
1
Main Terminal 1  
Peak Gate Power  
(Pulse Width = 1.0 msec, T = 70°C)  
P
W
W
GM  
2
3
4
Main Terminal 2  
Gate  
C
Average Gate Power  
(t = 8.3 msec, T = 70°C)  
P
0.35  
G(AV)  
C
Main Terminal 2  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 110  
−40 to 150  
°C  
°C  
J
T
stg  
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Device  
Package  
Shipping  
MAC12SM  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC12SMG  
TO−220AB  
(Pb−Free)  
1. (V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
MAC12SN  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC12SNG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 3  
MAC12SM/D  
 

MAC12SMG 替代型号

型号 品牌 替代类型 描述 数据表
MAC12SM ONSEMI

完全替代

Sensitive Gate Triacs
BTA212-600D NXP

功能相似

Three quadrant triacs guaranteed commutation

与MAC12SMG相关器件

型号 品牌 获取价格 描述 数据表
MAC12SN ONSEMI

获取价格

Sensitive Gate Triacs
MAC12SN ROCHESTER

获取价格

800V, 12A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB, CASE 221A-09, 3 PIN
MAC12SNG ONSEMI

获取价格

Sensitive Gate Triacs Silicon Bidirectional Thyristors
MAC12SNG ROCHESTER

获取价格

800V, 12A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB, CASE 221A-09, 3 PIN
MAC12SNG LITTELFUSE

获取价格

此三端双向可控硅专为需要对交流负载进行全波控制的工业和消费应用而设计,例如家电控制、加热器
MAC137-500-AC MOTOROLA

获取价格

500V, 8A, TRIAC, TO-220AB
MAC137-500-AF MOTOROLA

获取价格

500V, 8A, TRIAC, TO-220AB
MAC137-500-AJ MOTOROLA

获取价格

TRIAC, 500V V(DRM), 8A I(T)RMS, TO-220AB,
MAC137-500-AK MOTOROLA

获取价格

TRIAC, 500V V(DRM), 8A I(T)RMS, TO-220AB,
MAC137-500-AN MOTOROLA

获取价格

TRIAC, 500V V(DRM), 8A I(T)RMS, TO-220AB,