MAC12N

更新时间： 2024-10-28 04:17:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	62K
描述
Triacs Silicon Bidirectional Thyristors

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中文翻译

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数据手册
替代型号

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MAC12N 数据手册

MAC12D, MAC12M, MAC12N

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed for high performance full−wave ac control applications

where high noise immunity and commutating di/dt are required.

http://onsemi.com

Features

TRIACS

• Blocking Voltage to 800 Volts

• On−State Current Rating of 12 Amperes RMS at 70°C

• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3

• High Immunity to dv/dt − 250 V/ms Minimum at 125°C

• High Commutating di/dt − 6.5 A/ms Minimum at 125°C

• Industry Standard TO−220 AB Package

• High Surge Current Capability − 100 Amperes

• Pb−Free Packages are Available*

12 AMPERES RMS

400 thru 800 VOLTS

MT2

MT1

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

RRM

(T = −40 to 125°C, Sine Wave,

MAC12xG

AYWW

50 to 60 Hz, Gate Open)

MAC12D

400

600

800

TO−220AB

CASE 221A−09

STYLE 4

MAC12M

MAC12N

On-State RMS Current

(All Conduction Angles; T = 70°C)

T(RMS)

= D, M, or N

= Assembly Location

= Year

Peak Non-Repetitive Surge Current

(One Full Cycle, 60 Hz, T = 125°C)

100

TSM

WW = Work Week

Circuit Fusing Consideration (t = 8.33 ms)

I t

A sec

= Pb−Free Package

Peak Gate Power

(Pulse Width ≤ 1.0 ms, T = 80°C)

PIN ASSIGNMENT

Main Terminal 1

Main Terminal 2

Gate

Average Gate Power

0.35

G(AV)

(t = 8.3 ms, T = 80°C)

Operating Junction Temperature Range

Storage Temperature Range

−40 to +125

−40 to +150

°C

stg

Main Terminal 2

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

Device

Package

Shipping

1. V

and V

for all types can be applied on a continuous basis. Blocking

MAC12D

TO−220AB

50 Units / Rail

DRM

RRM

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

MAC12DG

TO−220AB

(Pb−Free)

MAC12M

TO−220AB

50 Units / Rail

MAC12MG

TO−220AB

(Pb−Free)

MAC12N

TO−220AB

50 Units / Rail

MAC12NG

TO−220AB

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 4

MAC12/D

12 3 4 5 6

中文翻译

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MAC12N 替代型号

型号	品牌	替代类型	描述	数据表
MAC12NG	ONSEMI	完全替代	Triacs Silicon Bidirectional Thyristors
MAC12NG	LITTELFUSE	类似代替	TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB, CASE 221A-09, 3 PIN
BTB12-800CWRG	STMICROELECTRONICS	功能相似	12A TRIACS

与MAC12N相关器件

型号	品牌	获取价格	描述	数据表
MAC12N-AF	MOTOROLA	获取价格	800V, 12A, TRIAC, TO-220AB
MAC12N-AK	MOTOROLA	获取价格	800V, 12A, TRIAC, TO-220AB
MAC12N-AN	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB,
MAC12N-AS	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB,
MAC12N-AU	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB,
MAC12N-BA	MOTOROLA	获取价格	800V, 12A, TRIAC, TO-220AB
MAC12N-BC	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB,
MAC12N-BD	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB,
MAC12N-BG	MOTOROLA	获取价格	800V, 12A, TRIAC, TO-220AB
MAC12N-BL	MOTOROLA	获取价格	TRIAC, 800V V(DRM), 12A I(T)RMS, TO-220AB,

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