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MAC08BT1G PDF预览

MAC08BT1G

更新时间: 2024-11-07 03:50:31
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅三端双向交流开关光电二极管
页数 文件大小 规格书
7页 94K
描述
Sensitive Gate Triacs Silicon Bidirectional Thyristors

MAC08BT1G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-261AA
包装说明:LEAD FREE, CASE 318E-04, TO-261, 4 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:7.06
Is Samacsys:N其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
换向电压的临界上升率-最小值:1.5 V/us关态电压最小值的临界上升速率:10 V/us
最大直流栅极触发电流:10 mA最大直流栅极触发电压:2 V
最大维持电流:5 mAJEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
最大漏电流:0.01 mA湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:110 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:0.8 A
断态重复峰值电压:200 V子类别:TRIACs
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

MAC08BT1G 数据手册

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MAC08BT1, MAC08MT1  
Preferred Device  
Sensitive Gate Triacs  
Silicon Bidirectional Thyristors  
Designed for use in solid state relays, MPU interface, TTL logic and  
other light industrial or consumer applications. Supplied in surface  
mount package for use in automated manufacturing.  
http://onsemi.com  
Features  
TRIAC  
Sensitive Gate Trigger Current in Four Trigger Modes  
Blocking Voltage to 600 Volts  
0.8 AMPERE RMS  
200 thru 600 VOLTS  
Glass Passivated Surface for Reliability and Uniformity  
Surface Mount Package  
MT2  
MT1  
Pb−Free Packages are Available  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
(Sine Wave, 50 to 60 Hz, Gate Open,  
V
V
V
4
DRM,  
RRM  
200  
600  
T = 25 to 110°C)  
J
MAC08BT1  
MAC08MT1  
SOT−223  
CASE 318E  
STYLE 11  
AYW  
AC08x G  
G
On−State Current RMS (T = 80°C)  
I
0.8  
8.0  
A
A
C
T(RMS)  
(Full Sine Wave 50 to 60 Hz)  
1
2
3
Peak Non−repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
I
TSM  
A
Y
= Assembly Location  
= Year  
T
= 25°C)  
C
W
= Work Week  
2
2
Circuit Fusing Considerations  
(Pulse Width = 8.3 ms)  
I t  
0.4  
5.0  
0.1  
A s  
AC08X = Device Code  
x= B or M  
Peak Gate Power  
(T = 80°C, Pulse Width v 1.0 ms)  
C
P
W
W
G
= Pb−Free Package  
GM  
(Note: Microdot may be in either location)  
Average Gate Power  
P
G(AV)  
(T = 80°C, t = 8.3 ms)  
C
PIN ASSIGNMENT  
1
2
3
4
Main Terminal 1  
Main Terminal 2  
Gate  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +110  
−40 to +150  
°C  
°C  
J
T
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Main Terminal 2  
ORDERING INFORMATION  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Device  
Package  
Shipping  
MAC08BT1  
SOT−223  
1000 Tape & Reel  
1000 Tape & Reel  
THERMAL CHARACTERISTICS  
MAC08BT1G  
SOT−223  
(Pb−Free)  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Ambient  
PCB Mounted per Figure 1  
R
156  
°C/W  
q
JA  
MAC08MT1  
SOT−223  
1000 Tape & Reel  
1000 Tape & Reel  
MAC08MT1G  
SOT−223  
(Pb−Free)  
Thermal Resistance, Junction−to−Tab  
Measured on MT2 Tab Adjacent to Epoxy  
R
25  
°C/W  
°C  
q
JT  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Maximum Device Temperature for  
Soldering Purposes for 10 Secs Maximum  
T
260  
L
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 5  
MAC08BT1/D  
 

MAC08BT1G 替代型号

型号 品牌 替代类型 描述 数据表
MAC08BT1 ONSEMI

完全替代

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Z0109NN,135 NXP

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