10 W GaN Power Amplifier
6 - 18 GHz
MAAP-011422-DIE
Rev. V2
Block Diagram
Features
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Gain: 20 dB
Output Power: 41.5 dBm @ 12 GHz
PAE: 33%
Power Supply: 12 V, 3.5 A @ 12 GHz
Input & Output Matched: 50 Ω
Die Size: 4160 x 3100 x 100 µm
RoHS* Compliant
Applications
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Radar
SATCOM
Description
MAAP-011422-DIE is a 10 W high-performance GaN
Power Amplifier MMIC designed to operate from
6 to 18 GHz and is offered in bare die form. It is fully
matched across the frequency band.
Pad Configuration
The MAAP-011422-DIE has 41 dBm of output power
and 33% PAE and can be used an a power amplifier
stage. This device is ideally suited to satellite
communication and radar applications.
Pad #
Function
1,3,4,6,9,11,12,14,15,17,
20,22
Ground
2
Input RF
The MAAL-011422-DIE is manufactured using a
high performance 100 nm gate length GaN on Si
HEMT power technology (D01GH). The MMIC uses
gold bonding pads and backside metallization and is
fully protected with silicon nitride passivation to
obtain the highest level of reliability.
5
Gate Voltage Stage 1 North
Gate Voltage Stage 2 North
Drain Voltage Stage 1 North
Drain Voltage Stage 2 North
Output RF
7
8
10
13
16
18
19
21
Drain Voltage Stage 2 South
Drain Voltage Stage 1 South
Gate Voltage Stage 2 South
Gate Voltage Stage 1 South
Ordering Information
Part Number
Package
Bare die
MAAP-011422-DIE
MAAP-011422-SB2
Evaluation Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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Visit www.macom.com for additional data sheets and product information.
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DC-0031873