10 W, GaN Power Amplifier
32 - 38 GHz
MAAP-011413-DIE
Rev. V2
Block Diagram
Features
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Gain: 20 dB
Output Power: 40 dBm
PAE: 28%
Power Supply: 12 V, 3.2 A @ Saturated Power
Input & Output Matched: 50 Ω
Die Size: 3360 x 3390 x 100 µm
RoHS* Compliant
Applications
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Radar
SATCOM
Description
MAAP-011413-DIE is a 10 W high-performance GaN
Power Amplifier MMIC designed to operate from
32 to 38 GHz and is offered in bare die form. It is
fully matched across the frequency band.
Pad Configuration
The MAAP-011413-DIE has 40 dBm of output
power, 28% PAE, 20dB of gain and can be used as
a power amplifier stage. This device is ideally suited
to satellite communication and radar applications.
Pad #
Function
1,3,4,6,8,10,12,15,16,18,
19,22,24,26,28,30
Ground
2
5
Input RF
The MAAL-011413-DIE is manufactured using a
high performance 100 nm gate length GaN on Si
HEMT power technology (D01GH). The MMIC uses
gold bonding pads and backside metallization and is
fully protected with silicon nitride passivation to
obtain the highest level of reliability.
Gate Voltage Stage 1 North
Gate Voltage Stage 2 North
Gate Voltage Stage 3 North
Drain Voltage Stage 1 North
7
9
11
13
14
17
20
21
23
Drain Voltage Stage 2 North
Drain Voltage Stage 3 North
Output RF
Drain Voltage Stage 3 South
Drain Voltage Stage 2 South
Drain Voltage Stage 1 South
Ordering Information
25
27
29
Gate Voltage Stage 3 South
Gate Voltage Stage 2 South
Gate Voltage Stage 1 South
Part Number
Package
Bare die
MAAP-011413-DIE
MAAP-011413-SB2
Evaluation Board
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
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DC-0031872