Power Amplifier, 1 W
20 - 55 GHz
MAAP-011379-DIE
Rev. V2
Features
Functional Schematic
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High Gain: 22 dB
P1dB: 28 dBm
PSAT: 30 dBm
Output IP3: 37 dBm
Bias Voltage: VDD = 5 V
Bias Current: IDSQ = 1500 mA
50 Ω Matched Input / Output
Temperature Compensated Output Power
Detector
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Die Size: 2900 x 3500 x 100 µm
RoHS* Compliant
Applications
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Test & Measurement
5G FR2, EW, ECM
Radar
Description
Bond Pad Configuration1
The MAAP-011379-DIE is a 1 W distributed power
amplifier offered in die form. The power amplifier
operates from 20 to 55 GHz and provides 22 dB of
linear gain and 30 dBm saturated output power. The
device is fully matched across the band and includes
a temperature compensated output power detector.
Pad #
Pad Name
GND
Description
Ground
1,3,7,8,13,16,18,23
2
RFIN
RF Input
The MAAP-011379-DIE can be used as a power
amplifier stage or as a driver stage in higher power
applications. This device is ideally suited for test
and measurement, 5G FR2, EW, ECM, and radar
applications.
4, 22
5,6
VG1,VG2
VD1
Gate Voltages
Drain Voltage 1
Drain Voltage 2
Drain Voltage 3
Drain Voltage 4
Drain Voltage 5
RF Output
9,10
11,12
14,15
20,21
17
VD2
This product is fabricated using a GaAs pHEMT
process which features full passivation for enhanced
reliability.
VD3
VD4
VD5
RFOUT
VDET
Ordering Information
19
Power Detector
1. Backside of die must be connected to RF, DC and thermal
ground.
MAAP-011379-DIE
Bare Die
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0026738