Power Amplifier, 0.5 W
20 - 55 GHz
MAAP-011378-DIE
Rev. V2
Features
Functional Schematic
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High Gain: 22 dB
P1dB: 25 dBm
PSAT: 27 dBm
Output IP3: 35 dBm
Bias Voltage: VDD = 5 V
Bias Current: IDSQ = 750 mA
50 Ω Matched Input / Output
Temperature Compensated Output Power
Detector
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Die Size: 2900 x 1724 x 100 µm
RoHS* Compliant
Applications
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Test & Measurement
5G FR2, EW, ECM
Radar
Bond Pad Configuration1
Pad #
Pad Name
GND
RFIN
VG1
Description
Ground
Description
1,3,7,8,12,15
The MAAP-011378-DIE is a 0.5 W distributed power
amplifier offered in die form. The power amplifier
operates from 20 to 55 GHz and provides 22 dB of
linear gain and 27 dBm of saturated output power.
The device is fully matched across the band and
includes a temperature compensated output power
detector.
2
4
RF Input
Gate Voltage 1
Drain Voltage 1
Drain Voltage 2
RF Output
5
VD1
6
VD2
The MAAP-011378-DIE can be used as a power
amplifier stage or as a driver stage in higher power
applications. This device is ideally suited for test
and measurement, 5G FR2, EW, ECM, and radar
applications.
9
RFOUT
VD3
10
11
13
14
Drain Voltage 3
Drain Voltage 4
Power Detector
Gate Voltage 2
VD4
This product is fabricated using a GaAs pHEMT
process which features full passivation for enhanced
reliability.
VDET
VG2
1. Backside of die must be connected to RF, DC and thermal
ground.
Ordering Information
MAAP-011378-DIE
Bare Die
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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DC-0026736