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MAAP-011378-DIE PDF预览

MAAP-011378-DIE

更新时间: 2024-11-19 17:01:15
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
12页 699K
描述
Power Amplifier, 0.5 W

MAAP-011378-DIE 数据手册

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Power Amplifier, 0.5 W  
20 - 55 GHz  
MAAP-011378-DIE  
Rev. V2  
Features  
Functional Schematic  
High Gain: 22 dB  
P1dB: 25 dBm  
PSAT: 27 dBm  
Output IP3: 35 dBm  
Bias Voltage: VDD = 5 V  
Bias Current: IDSQ = 750 mA  
50 Ω Matched Input / Output  
Temperature Compensated Output Power  
Detector  
Die Size: 2900 x 1724 x 100 µm  
RoHS* Compliant  
Applications  
Test & Measurement  
5G FR2, EW, ECM  
Radar  
Bond Pad Configuration1  
Pad #  
Pad Name  
GND  
RFIN  
VG1  
Description  
Ground  
Description  
1,3,7,8,12,15  
The MAAP-011378-DIE is a 0.5 W distributed power  
amplifier offered in die form. The power amplifier  
operates from 20 to 55 GHz and provides 22 dB of  
linear gain and 27 dBm of saturated output power.  
The device is fully matched across the band and  
includes a temperature compensated output power  
detector.  
2
4
RF Input  
Gate Voltage 1  
Drain Voltage 1  
Drain Voltage 2  
RF Output  
5
VD1  
6
VD2  
The MAAP-011378-DIE can be used as a power  
amplifier stage or as a driver stage in higher power  
applications. This device is ideally suited for test  
and measurement, 5G FR2, EW, ECM, and radar  
applications.  
9
RFOUT  
VD3  
10  
11  
13  
14  
Drain Voltage 3  
Drain Voltage 4  
Power Detector  
Gate Voltage 2  
VD4  
This product is fabricated using a GaAs pHEMT  
process which features full passivation for enhanced  
reliability.  
VDET  
VG2  
1. Backside of die must be connected to RF, DC and thermal  
ground.  
Ordering Information  
MAAP-011378-DIE  
Bare Die  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
DC-0026736  

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