Datasheet > MAAP-011377-DIE

MAAP-011377-DIE

更新时间： 2024-11-22 17:01:43

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
12页	696K
描述
Power Amplifier, 0.25 W

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数据手册

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MAAP-011377-DIE 数据手册

Power Amplifier, 0.25 W

20 - 55 GHz

MAAP-011377-DIE

Rev. V2

Features

Functional Schematic

•

High Gain: 22 dB

P1dB: 24 dBm

P_SAT: 24.5 dBm

Output IP3: 33 dBm

Bias Voltage: V_DD= 5 V

Bias Current: I_DSQ= 375 mA

50 Ω Matched Input / Output

Temperature Compensated Output Power

Detector

•

Die Size: 2500 x 851 x 100 µm

RoHS* Compliant

Applications

•

Test & Measurement

5G FR2, EW, ECM

Radar

Bond Pad Configuration¹

Pad #

Pad Name

RFIN

GND

Description

RF Input

Description

The MAAP-011377-DIE is a 0.25 W distributed

power amplifier offered in die form. The power

amplifier operates from 20 to 55 GHz and provides

22 dB of linear gain and 24.5 dBm of saturated

output power. The device is fully matched across the

band and includes a temperature compensated

output power detector.

2,6,7,10,12

Ground

VG1

Gate Voltage 1

Drain Voltage 1

Drain Voltage 2

RF Output

VD1

VD2

The MAAP-011377-DIE can be used as a power

amplifier stage or as a driver stage in higher power

applications. This device is ideally suited for test

and measurement, 5G FR2, EW, ECM, and radar

applications.

RFOUT

V_DET

Power Detector

Gate Voltage 2

VG2

This product is fabricated using a GaAs pHEMT

process which features full passivation for enhanced

reliability.

1. Backside of die must be connected to RF, DC and thermal

ground.

Ordering Information

MAAP-011377-DIE

Bare Die

* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0026735

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