Power Amplifier, 0.25 W
20 - 55 GHz
MAAP-011377
Rev. V1
Functional Schematic
Features
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High Gain: 22 dB
P1dB: 24 dBm
PSAT: 24.5 dBm
Output IP3: 33 dBm
Bias Voltage: VDD = 5 V
Bias Current: IDSQ = 375 mA
50 Ω Matched Input / Output
Temperature Compensated Output Power
Detector
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Lead-Free 5 mm 12 lead SMT package
RoHS* Compliant
Applications
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ISM / MM
Pin Configuration3
Description
The MAAP-011377 is a 0.25 W distributed power
amplifier offered in a 5 mm SMT package. The
power amplifier operates from 20 to 55 GHz and
provides 22 dB of linear gain and 24.5 dBm of
saturated output power. The device is fully matched
across the band and includes a temperature
compensated output power detector.
Pad #
Pad Name
RFIN
Description
RF Input
1
2,3,4,5,8,10,11
NC4
Not Internally Connected
Power Detector
RF Output
6
7
VDET
RFOUT
VD
The MAAP-011377 can be used as a power
amplifier stage or as a driver stage in higher power
applications. This device is ideally suited for test
and measurement, 5G FR2, EW, ECM, and radar
applications.
9
Drain Voltage
Gate Voltage
12
VG
3. Ground paddle must be connected to RF, DC and thermal
ground.
This product is fabricated using a GaAs pHEMT
process which features full passivation for enhanced
reliability.
4. It is recommended that these pins are grounded on the
application PCB.
Ordering Information1,2
MAAP-011377-TR0500
MAAP-011377-SMB
500 Piece Reel
Sample Board
1. Reference Application Note M513 for reel size information.
2. All sample boards include 3 loose parts.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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DC-0031138